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Register a new userLarge-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
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Added by
Fr\\'ed\\'eric Bonell
Publication date
2021
fields
Physics
and research's language is
English
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In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films.
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The van der Waals ferromagnet Fe5GeTe2 has a Curie temperature TC of about 270 K, which can be raised above room temperature by tuning the Fe deficiency content. To achieve insights into its ferromagnetic exchange, we have studied the critical behavior by measuring the magnetization in bulk Fe5GeTe2 crystal around the ferromagnetic to paramagnetic phase transition. The analysis of the magnetization by employing various techniques including the modified Arrott plot, Kouvel-Fisher plot and critical isotherm analysis achieved a set of reliable critical exponents with TC = 273.7 K, beta = 0.3457, gamma = 1.40617, and delta = 5.021, suggesting a three-dimensional magnetic exchange with the distance decaying as J(r) ~ (r)$^-4.916, which is close to that of a three-dimensional Heisenberg model with long-range magnetic coupling.
Evolution of magnetism in single crystals of the van der Waals compound VI3 in external pressure up to 7.3 GPa studied by measuring magnetization and ac magnetic susceptibility is reported. Four magnetic phase transitions, at T1 = 54.5 K, T2 = 53 K, TC = 49.5 K, and TFM = 26 K, respectively have been observed at ambient pressure. The first two have been attributed to the onset of ferromagnetism in specific crystal-surface layers. The bulk ferromagnetism is characterized by the magnetic ordering transition at Curie temperature TC and the transition between two different ferromagnetic phases TFM, accompanied by a structure transition from monoclinic to triclinic symmetry upon cooling. The pressure effects on magnetic parameters were studied with three independent techniques. TC was found to be almost unaffected by pressures up to 0.6 GPa whereas TFM increases rapidly with increasing pressure and reaches TC at a triple point at ~ 0.85 GPa. At higher pressures, only one magnetic phase transition is observed moving to higher temperatures with increasing pressure to reach 99 K at 7.3 GPa. In contrast, the low-temperature bulk magnetization is dramatically reduced by applying pressure (by more than 50% at 2.5 GPa) suggesting a possible pressure-induced reduction of vanadium magnetic moment. We discussed these results in light of recent theoretical studies to analyze exchange interactions and provide how to increase the Curie temperature of VI3.
Fe5-xGeTe2 is a van der Waals material with one of the highest reported bulk Curie temperatures, $T_C$ ~ 310K. In this study, theoretical calculations and experiments are utilized to demonstrate that the magnetic ground state is highly sensitive to local atomic arrangements and the interlayer stacking. Cobalt substitution is found to be an effective way to manipulate the magnetic properties while also increasing the ordering temperature. In particular, cobalt substitution up to 30% enhances $T_C$ and changes the magnetic anisotropy, while approximately 50% cobalt substitution yields an antiferromagnetic state. Single crystal x-ray diffraction evidences a structural change upon increasing the cobalt concentration, with a rhombohedral cell observed in the parent material and a primitive cell observed for ~46% cobalt content relative to iron. First principles calculations demonstrate that it is a combination of high cobalt content and the concomitant change to primitive layer stacking that produces antiferromagnetic order. These results illustrate the sensitivity of magnetism in Fe5-xGeTe2 to composition and structure, and emphasize the important role of structural order/disorder and layer stacking in cleavable magnetic materials.
The recent emergence of 2D van der Waals magnets down to atomic layer thickness provides an exciting platform for exploring quantum magnetism and spintronics applications. The van der Waals nature stabilizes the long-range ferromagnetic order as a result of magnetic anisotropy. Furthermore, giant tunneling magnetoresistance and electrical control of magnetism have been reported. However, the potential of 2D van der Waals magnets for magnonics, magnon-based spintronics, has not been explored yet. Here, we report the experimental observation of long-distance magnon transport in quasi-twodimensional van der Waals antiferromagnet MnPS3, which demonstrates the 2D magnets as promising material candidates for magnonics. As the 2D MnPS3 thickness decreases, a shorter magnon diffusion length is observed, which could be attributed to the surface-impurity-induced magnon scattering. Our results could pave the way for exploring quantum magnonics phenomena and designing future magnonics devices based on 2D van der Waals magnets.
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.
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