Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userHeat Diffusion Imaging: In-Plane Thermal Conductivity Measurement of Thin Films in a Broad Temperature Range
82
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map across the film surface. The in-plane thermal conductivity can be extracted from the temperature decay profile. By coupling the system with a cryostat, we were able to conduct measurements from 40 K to 400 K. Silicon thin film samples with and without periodic holes were measured and compared with in-plane time-domain thermoreflectance (TDTR) measurement and literature data as validation for heat diffusion imaging.
rate research
Read More
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.
A numerical modeling study based on 3D finite element method (FEM) simulation and 1D analytical solutions has been carried out to evaluate the capabilities of two ac methods for measuring in-plane thermal conductivity of thin film deposited on the back of a suspended SiNx membrane setup. Two parallel metal strips are present on the top of the dielectric membrane. One strip (S1) serves as both heater and thermometer, while another one (S2) acts as thermometer only. For a modified phase shift (MPS) method, it is crucial to extract the in-plane thermal diffusivity from the phase shift of the temperature oscillation on S2. It was found that the frequency window for carrying out the data fitting became narrower as the in-plane thermal diffusivity of the composite membrane (${alpha_{parallel ,C}}$) increased, primarily due to the failure of the semi-infinite width assumption in the low frequency region. To ensure the validity of the method, the upper limit of ${alpha_{parallel ,C}}$ should not exceed ~1.8$ times $10-5 m2 s-1 for the specific membrane dimension under consideration (1$times $1 mm2). On the other hand, inspired by a modified Angstrom method proposed by Zhu recently, we suggest a new data reduction methodology which takes advantage of the phase shift on both S1 and S2 as well as the amplitude on S1. Based on the simulation results, it is expected that the non-ideality associated with the three observables may be at least partially cancelled out.Therefore, the frequency window selection for carrying out the data fitting is not sensitive to the magnitude of ${alpha_{parallel ,C}}$. For typical specimen films whose in-plane thermal conductivity ranges from 0.84 W m-1 K-1 to 50 W m-1 K-1, the method proposed here yields a theoretical measurement uncertainty of less than 5%.
Various unusual behaviors of artificial materials are governed by their topological properties, among which the edge state at the boundary of a photonic or phononic lattice has been captivated as a popular notion. However, this remarkable bulk-boundary correspondence and the related phenomena are missing in thermal materials. One reason is that heat diffusion is described in a non-Hermitian framework because of its dissipative nature. The other is that the relevant temperature field is mostly composed of modes that extend over wide ranges, making it difficult to be rendered within the tight-binding theory as commonly employed in wave physics. Here, we overcome the above challenges and perform systematic studies on heat diffusion in thermal lattices. Based on a continuum model, we introduce a state vector to link the Zak phase with the existence of the edge state, and thereby analytically prove the thermal bulk-boundary correspondence. We experimentally demonstrate the predicted edge states with a topologically protected and localized heat dissipation capacity. Our finding sets up a solid foundation to explore the topology in novel heat transfer manipulations.
A normal-diffusion theory for heat transfer in many-body systems via carriers of thermal photons is developed. The thermal conductivity tensor is rigorously derived from fluctuational electrodynamics as a coefficient of diffusion term for the first time. In addition, a convection-like heat transfer behavior is revealed in systems of asymmetric distribution of particles, indicating violation of Fouriers law for such system. Considering the central role of thermal conductivity in heat transfer, this work paves a way for understanding, analysis and manipulation of heat transfer in nanoparticle system via thermal photons with many-body interactions.
The coherent manipulation of acoustic waves on the nanoscale usually requires multilayers with thicknesses and interface roughness defined down to the atomic monolayer. This results in expensive devices with predetermined functionality. Nanoscale mesoporous materials present high surface-to-volume ratio and tailorable mesopores, which allow the incorporation of chemical functionalization to nanoacoustics. However, the presence of pores with sizes comparable to the acoustic wavelength is intuitively perceived as a major roadblock in nanoacoustics. Here we present multilayered nanoacoustic resonators based on mesoporous SiO$_2$ thin-films showing acoustic resonances in the 5-100 GHz range. We characterize the acoustic response of the system using coherent phonon generation experiments. Despite resonance wavelengths comparable to the pore size, we observe for the first time unexpectedly well-defined acoustic resonances with Q-factors around 10. Our results open the path to a promising platform for nanoacoustic sensing and reconfigurable acoustic nanodevices based on soft, inexpensive fabrication methods.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
