No Arabic abstract
A numerical modeling study based on 3D finite element method (FEM) simulation and 1D analytical solutions has been carried out to evaluate the capabilities of two ac methods for measuring in-plane thermal conductivity of thin film deposited on the back of a suspended SiNx membrane setup. Two parallel metal strips are present on the top of the dielectric membrane. One strip (S1) serves as both heater and thermometer, while another one (S2) acts as thermometer only. For a modified phase shift (MPS) method, it is crucial to extract the in-plane thermal diffusivity from the phase shift of the temperature oscillation on S2. It was found that the frequency window for carrying out the data fitting became narrower as the in-plane thermal diffusivity of the composite membrane (${alpha_{parallel ,C}}$) increased, primarily due to the failure of the semi-infinite width assumption in the low frequency region. To ensure the validity of the method, the upper limit of ${alpha_{parallel ,C}}$ should not exceed ~1.8$ times $10-5 m2 s-1 for the specific membrane dimension under consideration (1$times $1 mm2). On the other hand, inspired by a modified Angstrom method proposed by Zhu recently, we suggest a new data reduction methodology which takes advantage of the phase shift on both S1 and S2 as well as the amplitude on S1. Based on the simulation results, it is expected that the non-ideality associated with the three observables may be at least partially cancelled out.Therefore, the frequency window selection for carrying out the data fitting is not sensitive to the magnitude of ${alpha_{parallel ,C}}$. For typical specimen films whose in-plane thermal conductivity ranges from 0.84 W m-1 K-1 to 50 W m-1 K-1, the method proposed here yields a theoretical measurement uncertainty of less than 5%.
This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map across the film surface. The in-plane thermal conductivity can be extracted from the temperature decay profile. By coupling the system with a cryostat, we were able to conduct measurements from 40 K to 400 K. Silicon thin film samples with and without periodic holes were measured and compared with in-plane time-domain thermoreflectance (TDTR) measurement and literature data as validation for heat diffusion imaging.
We fabricate a microscale electromechanical system, in which a suspended superconducting membrane, treated as a mechanical oscillator, capacitively couples to a superconducting microwave resonator. As the microwave driving power increases, nonmonotonic dependence of the resonance frequency of the mechanical oscillator on the driving power has been observed. We also demonstrate the optical switching of the resonance frequency of the mechanical oscillator. Theoretical models for qualitative understanding of our experimental observations are presented. Our experiment may pave the way for the application of a mechanical oscillator with its resonance frequency controlled by the electromagnetic and/or optical fields, such as a microwave-optical interface and a controllable element in a superqubit-mechanical oscillator hybrid system.
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.
Modifying phonon thermal conductivity in nanomaterials is important not only for fundamental research but also for practical applications. However, the experiments on tailoring the thermal conductivity in nanoscale, especially in two-dimensional materials, are rare due to technical challenges. In this work, we demonstrate in-situ thermal conduction measurement of MoS2 and find that its thermal conductivity can be continuously tuned to a required value from crystalline to amorphous limits. The reduction of thermal conductivity is understood from phonon-defects scatterings that decrease the phonon transmission coefficient. Beyond a threshold, a sharp drop in thermal conductivity is observed, which is believed to be a crystalline-amorphous transition. Our method and results provide guidance for potential applications in thermoelectrics, photoelectronics, and energy harvesting where thermal management is critical with further integration and miniaturization.
The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.