Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOn-chip self-referencing using integrated lithium niobate waveguides
159
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The measurement and stabilization of the carrier-envelope offset frequency $f_{textrm{CEO}}$ via self-referencing is paramount for optical frequency comb generation which has revolutionized precision frequency metrology, spectroscopy, and optical clocks. Over the past decade, the development of chip-scale platforms has enabled compact integrated waveguides for supercontinuum generation. However, there is a critical need for an on-chip self-referencing system that is adaptive to different pump wavelengths, requires low pulse energy, and does not require complicated processing. Here, we demonstrate efficient carrier-envelope offset frequency $f_{textrm{CEO}}$ stabilization of a modelocked laser with only 107 pJ of pulse energy via self-referencing in an integrated lithium niobate waveguide. We realize an $f$-$2f$ interferometer through second-harmonic generation and subsequent supercontinuum generation in a single dispersion-engineered waveguide with a stabilization performance equivalent to a conventional off-chip module. The $f_{textrm{CEO}}$ beatnote is measured over a pump wavelength range of 70 nm. We theoretically investigate our system using a single nonlinear envelope equation with contributions from both second- and third-order nonlinearities. Our modeling reveals rich ultrabroadband nonlinear dynamics and confirms that the initial second harmonic generation followed by supercontinuum generation with the remaining pump is responsible for the generation of a strong $f_{textrm{CEO}}$ signal as compared to a traditional $f$-$2f$ interferometer. Our technology provides a highly-simplified system that is robust, low cost, and adaptable for precision metrology for use outside a research laboratory.
rate research
Read More
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover -- from basic principles to the state of the art -- the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.
Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an essential component for integrated optical system, is urgently needed. In this paper, we reported the realization of 1550-nm band on-chip LNOI microlasers based on erbium-doped LNOI ring cavities with loaded quality factors higher than one million, which were fabricated by using electron beam lithography and inductively coupled plasma reactive ion etching processes. These microlasers demonstrated a low pump threshold of ~20 {mu}W and stable performance under the pump of a 980-nm band continuous laser. Comb-like laser spectra spanning from 1510 nm to 1580 nm were observed in high pump power regime, which lays the foundation of the realization of pulsed laser and frequency combs on rare-earth ion doped LNOI platform. This work has effectively promoted the development of on-chip integrated active LNOI devices.
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 {mu}W and a conversion efficiency of 3.1{times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ sim $ 1.05$times 10^{^5}$ ). C-band laser emission with $ sim $1530 nm and $ sim $1560 nm from the high-Q erbium-doped LNOI microdisk was demonstrated both with 974 nm and 1460 nm pumping, and the latter has better thermal stability. This microlaser would play an important role in the photonic integrated circuits of lithium niobate platform.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
