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Register a new userQuantum Diffusive Magneto-transport in Massive Dirac Materials with Chiral Symmetry Breaking
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Massive Dirac fermions break the chiral symmetry explicitly and also make the Berry curvature of the band structure non-Abelian. By utilizing the Greens function technique, we develop a microscopic theory to establish a set of quantum diffusive equations for massive Dirac materials in the presence of electric and magnetic fields. It is found that the longitudinal magnetoresistance is always negative and quadratic in the magnetic field, and decays quickly with the mass. The theory is applicable to the systems with non-Abelian Berry curvature and resolves the puzzles of anomalous magnetotransport properties measured in topological materials.
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Helical symmetry of massive Dirac fermions is broken explicitly in the presence of electric and magnetic fields. Here we present two equations for the divergence of helical and axial-vector currents following the Jackiw-Johnson approach to the anomaly of the neutral axial vector current. We discover the contribution from the helical symmetry breaking is attributed to the occupancy of the two states at the top of the valence band and the bottom of the conduction band. The explicit symmetry breaking fully cancels the anomalous correction from the quantum fluctuation in the band gap. The chiral anomaly can be derived from the helical symmetry breaking. It provides an alternative route to understand the chiral anomaly from the point of view of the helical symmetry breaking. The pertinent physical consequences in condensed matter are the helical magnetic effect which means a charge current circulating at the direction of the magnetic field, and the mass-dependent positive longitudinal magnetoconductivity as a transport signature. The discovery not only reflects anomalous magneto-transport properties of massive Dirac materials but also reveals the close relation between the helical symmetry breaking and the physics of chiral anomaly in quantum field theory and high energy physics.
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions in Dirac materials due to quantum interference in scalar impurity scattering potentials. It reveals a striking crossover from positive to negative magnetoresistivity, uncovering strong competition between weak localization and weak antilocalization in multiple Cooperon modes at different chemical potentials, effective masses and finite temperatures. The work sheds light on the important role of strong coupling of the conduction and valence bands in the quantum interference transport in topological nontrivial and trivial Dirac materials.
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices.
Two-dimensional (2D) massive Dirac electrons possess a finite Berry curvature, with Chern number $pm 1/2$, that entails both a quantized dc Hall response and a subgap full-quarter Kerr rotation. The observation of these effects in 2D massive Dirac materials such as gapped graphene, hexagonal boron nitride or transition metal dichalcogenides (TMDs) is obscured by the fact that Dirac cones come in pairs with opposite sign Berry curvatures, leading to a vanishing Chern number. Here, we show that the presence of spin-orbit interactions, combined with an exchange spin splitting induced either by diluted magnetic impurities or by proximity to a ferromagnetic insulator, gives origin to a net magneto-optical Kerr effect in such systems. We focus on the case of TMD monolayers and study the dependence of Kerr rotation on frequency and exchange spin splitting. The role of the substrate is included in the theory and found to critically affect the results. Our calculations indicate that state-of-the-art magneto-optical Kerr spectroscopy can detect a single magnetic impurity in diluted magnetic TMDs.
Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices.
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