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Register a new userIonic-liquid-gating induced protonation and superconductivity in FeSe, FeSe0.93S0.07, ZrNCl, 1T-TaS2, and Bi2Se3
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We report protonation in several compounds by an ionic-liquid-gating method, with optimized gating conditions. This leads to single superconducting phases for several compounds. Non-volatility of protons allow post-gating magnetization and transport measurements. The superconducting transition temperature $T_C$ is enhanced to 43.5~K for FeSe$_{0.93}$S$_{0.07}$, and 41~K for FeSe after protonation. Superconductivity with $T_c$$approx$15~K for ZrNCl, $approx$7.2~K for 1$T$-TaS$_2$, and $approx$3.8~K for Bi$_2$Se$_3$ are induced after protonation. Electric transport in protonated FeSe$_{0.93}$S$_{0.07}$ confirms high-temperature superconductivity. Our $^{1}$H NMR measurements on protonated FeSe$_{1-x}$S$_{x}$ reveal enhanced spin-lattice relaxation rate $1/^{1}T_1$ with increasing $x$, which is consistent with LDA calculations that H$^{+}$ are located in the interstitial sites close to the anions.
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Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4pmdelta} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.
We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0leq x leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of pseudogap/Mott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state for the samples with the moderate doping levels. The superconductivity strongly depends on $x$ within a narrow range, and the maximum superconducting transition temperature is 2.8 K as $x=0.02$. We propose that the induced superconductivity and CDW phases are separated in real space. For high doping level ($x>0.04$), the Anderson localization (AL) state appears, resulting in a large increase of resistivity. We present a complete electronic phase diagram of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ system that shows a dome-like $T_{c}(x)$.
Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.
Superconductivity in FeTe0.8S0.2 is successfully induced by an electrochemical reaction using an ionic liquid solution. A clear correlation between the Fe concentration in the solution and the manifestation of superconductivity was confirmed, suggesting that superconductivity was induced by the deintercalation of excess iron.
Layered transition-metal dichalcogenides 1T-TaS2-xSex (0<=x<=2) single crystals have been successfully fabricated by using a chemical vapor transport technique in which Ta locates in octahedral coordination with S and Se atoms. This is the first superconducting example by the substitution of S site, which violates an initial rule based on the fact that superconductivity merely emerges in 1T-TaS2 by applying the high pressure or substitution of Ta site. We demonstrate the appearance of a series of electronic states in 1T-TaS2-xSex with Se content. Namely, the Mott phase melts into a nearly commensurate charge-density-wave (NCCDW) phase, superconductivity in a wide x range develops within the NCCDW state, and finally commensurate charge-density-wave (CCDW) phase reproduces for heavy Se content. The present results reveal that superconductivity is only characterized by robust Ta 5d band, demonstrating the universal nature in 1T-TaS2 systems that superconductivity and NCCDW phase coexist in the real space.
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