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Register a new userSub-picosecond photo-induced displacive phase transition in two-dimensional MoTe$_2$
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Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides, and can be used to stabilize a topological phase in an otherwise semiconducting material. Using first-principles calculations, we demonstrate that the PIPT in monolayer MoTe$_2$ from the semiconducting 2H phase to the topological 1T$$ phase can be triggered purely by electronic excitations that soften multiple lattice vibrational modes. These softenings, driven by a Peierls-like mechanism within the conduction bands, lead to structural symmetry breaking within sub-picosecond timescales, which is shorter than the timescale of a thermally driven phase transition. The transition is predicted to be triggered by photons with energies over $1.96$,eV, with an associated excited carrier density of $3.4times10^{14}$,cm$^{-2}$, which enables a controllable phase transformation by varying the laser wavelength. Our results provide insight into the underlying physics of the phase transition in 2D transition-metal ditellurides, and show an ultrafast phase transition mechanism for manipulation of the topological properties of 2D systems.
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Recent development of ultrashort laser pulses allows for optical control of structural and electronic properties of complex quantum materials. The layered transition metal dichalcogenide MoTe2, which can crystalize into several different structures with distinct topological and electronic properties, provides possibilities to control or switch between different phases. In this study we report a photo-induced sub-picosecond structural transition between the type-II Weyl semimetal phase and normal semimetal phase in bulk crystalline MoTe2 by using ultrafast pump-probe and time-resolved second harmonic generation spectroscopy. The phase transition is most clearly characterized by the dramatic change of the shear oscillation mode and the intensity loss of second harmonic generation. This work opens up new possibilities for ultrafast manipulation of the topological properties of solids, enabling potentially practical applications for topological switch device with ultrafast excitations.
The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of momentum dependence and spin-orientation, and is not completely suppressed above the centrosymmetry-breaking transition temperature. Two types of surface Fermi arc are found to persist well above the transition temperature. The appearance of a large Fermi arc depends strongly on thermal history, and the electron quasiparticle lifetimes are greatly enhanced in the initial cooling. The results indicate that polar instability with strong electron-lattice interactions exists near the surface when the bulk is largely in a centrosymmetric phase.
Topological phase transition is a hot topic in condensed matter physics and computational material science. Here, we investigate the electronic structure and phonon dispersion of the two-dimensional (2D) platinum ditelluride ($PtTe_2$) using the density functional theory. It is found that the $PtTe_2$ monolayer is a trivial insulator with an indirect band gap of 0.347eV. Based on parity analysis, the biaxial tensile strain can drive the topological phase transition. As the strain reaches 19.3%, $PtTe_2$ undergoes a topological phase transition, which changes from a trivial band insulator to a topological insulator with $Z_2=1$. Unlike conventional honeycomb 2D materials with topological phase transition, which gap closes at K points, the strained $PtTe_2$ monolayer becomes gapless at M points under critical biaxial strain. The band inversion leads the switch of the parities near the Fermi level, which gives rise to the topological phase transition. The novel monolayer $PtTe_2$ has a potential application in the field of micro-electronics.
Recent discoveries of broad classes of quantum materials have spurred fundamental study of what quantum phases can be reached and stabilized, and have suggested intriguing practical applications based on control over transitions between quantum phases with different electrical, magnetic, and$/$or optical properties. Tabletop generation of strong terahertz (THz) light fields has set the stage for dramatic advances in our ability to drive quantum materials into novel states that do not exist as equilibrium phases. However, THz-driven irreversible phase transitions are still unexplored. Large and doping-tunable energy barriers between multiple phases in two-dimensional transition metal dichalcogenides (2D TMDs) provide a testbed for THz polymorph engineering. Here we report experimental demonstration of an irreversible phase transition in 2D MoTe$_{2}$ from a semiconducting hexagonal phase (2H) to a predicted topological insulator distorted octahedral ($1T^{}$) phase induced by field-enhanced terahertz pulses. This is achieved by THz field-induced carrier liberation and multiplication processes that result in a transient high carrier density that favors the $1T^{}$ phase. Single-shot time-resolved second harmonic generation (SHG) measurements following THz excitation reveal that the transition out of the 2H phase occurs within 10 ns. This observation opens up new possibilities of THz-based phase patterning and has implications for ultrafast THz control over quantum phases in two-dimensional materials.
A circularly polarized a.c. pump field illuminated near resonance on two-dimensional transition metal dichalcogenides (TMDs) produces an anomalous Hall effect in response to a d.c. bias field. In this work, we develop a theory for this photo-induced anomalous Hall effect in undoped TMDs irradiated by a strong coherent laser field. The strong field renormalizes the equilibrium bands and opens up a dynamical energy gap where single-photon resonance occurs. The resulting photon dressed states, or Floquet states, are treated within the rotating wave approximation. A quantum kinetic equation approach is developed to study the non-equilibrium density matrix and time-averaged transport currents under the simultaneous influence of the strong a.c. pump field and the weak d.c. probe field. Dissipative effects are taken into account in the kinetic equation that captures relaxation and dephasing. The photo-induced longitudinal and Hall conductivities display notable resonant signatures when the pump field frequency reaches the spin-split interband transition energies. Rather than valley polarization, we find that the anomalous Hall current is mainly driven by the intraband response of photon-dressed electron populations near the dynamical gap at both valleys, accompanied by a smaller contribution due to interband coherences. These findings highlight the importance of photon-dressed bands and non-equilibrium distribution functions in achieving a proper understanding of photo-induced anomalous Hall effect in a strong pump field.
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