No Arabic abstract
Recent discoveries of broad classes of quantum materials have spurred fundamental study of what quantum phases can be reached and stabilized, and have suggested intriguing practical applications based on control over transitions between quantum phases with different electrical, magnetic, and$/$or optical properties. Tabletop generation of strong terahertz (THz) light fields has set the stage for dramatic advances in our ability to drive quantum materials into novel states that do not exist as equilibrium phases. However, THz-driven irreversible phase transitions are still unexplored. Large and doping-tunable energy barriers between multiple phases in two-dimensional transition metal dichalcogenides (2D TMDs) provide a testbed for THz polymorph engineering. Here we report experimental demonstration of an irreversible phase transition in 2D MoTe$_{2}$ from a semiconducting hexagonal phase (2H) to a predicted topological insulator distorted octahedral ($1T^{}$) phase induced by field-enhanced terahertz pulses. This is achieved by THz field-induced carrier liberation and multiplication processes that result in a transient high carrier density that favors the $1T^{}$ phase. Single-shot time-resolved second harmonic generation (SHG) measurements following THz excitation reveal that the transition out of the 2H phase occurs within 10 ns. This observation opens up new possibilities of THz-based phase patterning and has implications for ultrafast THz control over quantum phases in two-dimensional materials.
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.
The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we report on the discovery of an in-plane photoelectric effect occurring within a two-dimensional electron gas. In this purely quantum-mechanical, scattering-free process, photo-electron momenta are perfectly aligned with the desired direction of motion. The work function is artificially created and tunable in-situ. The phenomenon is utilized to build a direct terahertz detector, which yields a giant zero-bias photoresponse that exceeds the predictions by known mechanisms by more than 10-fold. This new aspect of light-matter interaction in two-dimensional systems paves the way towards a new class of highly efficient photodetectors covering the entire terahertz range.
Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides, and can be used to stabilize a topological phase in an otherwise semiconducting material. Using first-principles calculations, we demonstrate that the PIPT in monolayer MoTe$_2$ from the semiconducting 2H phase to the topological 1T$$ phase can be triggered purely by electronic excitations that soften multiple lattice vibrational modes. These softenings, driven by a Peierls-like mechanism within the conduction bands, lead to structural symmetry breaking within sub-picosecond timescales, which is shorter than the timescale of a thermally driven phase transition. The transition is predicted to be triggered by photons with energies over $1.96$,eV, with an associated excited carrier density of $3.4times10^{14}$,cm$^{-2}$, which enables a controllable phase transformation by varying the laser wavelength. Our results provide insight into the underlying physics of the phase transition in 2D transition-metal ditellurides, and show an ultrafast phase transition mechanism for manipulation of the topological properties of 2D systems.
We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and two-fold rotation symmetries. Contrary to the case of ordinary time-reversal invariant systems where a direct transition between two insulators is generally predicted, we find that the topological phase transition in systems with an additional two-fold rotation symmetry is mediated by an emergent stable two-dimensional Weyl semimetal phase between two insulators. Here the central role is played by the so-called space-time inversion symmetry, the combination of time-reversal and two-fold rotation symmetries, which guarantees the quantization of the Berry phase around a 2D Weyl point even in the presence of strong spin-orbit coupling. Pair-creation/pair-annihilation of Weyl points accompanying partner exchange between different pairs induces a jump of a 2D $Z_{2}$ topological invariant leading to a topological phase transition. According to our theory, the topological phase transition in HgTe/CdTe quantum well structure is mediated by a stable 2D Weyl semimetal phase since the quantum well, lacking inversion symmetry intrinsically, has two-fold rotation about the growth direction. Namely, the HgTe/CdTe quantum well can show 2D Weyl semimetallic behavior within a small but finite interval in the thickness of HgTe layers between a normal insulator and a quantum spin Hall insulator. We also propose that few-layer black phosphorus under perpendicular electric field is another candidate system to observe the unconventional topological phase transition mechanism accompanied by emerging 2D Weyl semimetal phase protected by space-time inversion symmetry.
The Su-Schrieffer-Heeger (SSH) model on a two-dimensional square lattice has been considered as a significant platform for studying topological multipole insulators. However, due to the highly-degenerate bulk energy bands protected by $ C_{4v} $ and chiral symmetry, the discussion of the zero-energy topological corner states and the corresponding physical realization have been rarely presented. In this work, by tuning the hopping terms to break $ C_{4v} $ symmetry down to $ C_{2v} $ symmetry but with the topological phase invariant, we show that the degeneracies can be removed and a complete band gap can be opened, which provides robust protection for the spectrally isolated zero-energy corner states. Meanwhile, we propose a rigorous acoustic crystalline insulator and therefore these states can be observed directly. Our work reveals the topological properties of the robust zero-energy states, and provides a new way to explore novel topological phenomena.