No Arabic abstract
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial resolution, allowing intriguing scientific phenomena to be explored such as charge carrier dynamics in nanostructures and THz plasmon-polaritons in novel 2D materials and devices. High-resolution THz imaging, so far, has been relying predominantly on THz detection techniques that require either an ultrafast laser or a cryogenically-cooled THz detector. Here, we demonstrate coherent near-field imaging in the THz frequency range using a room-temperature nanodetector embedded in the aperture of a near-field probe, and an interferometric optical setup driven by a THz quantum cascade laser (QCL). By performing phase-sensitive imaging of strongly confined THz fields created by plasmonic focusing we demonstrate the potential of our novel architecture for high-sensitivity coherent THz imaging with sub-wavelength spatial resolution.
Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally limited by the wave nature of light. Here, we conceive a novel architecture that exploits inherently strong evanescent THz field arising within the aperture to mitigate the problem of vanishing transmission. The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. The proposed novel THz near-field probes enable room-temperature sub-wavelength resolution coherent imaging with a 3.4 THz quantum cascade laser, paving the way to compact and versatile THz imaging systems and promising to bridge the gap in spatial resolution from the nanoscale to the diffraction limit.
A proof of concept for high speed near-field imaging with sub-wavelength resolution using SLM is presented. An 8 channel THz detector array antenna with an electrode gap of 100 um and length of 5 mm is fabricated using the commercially available GaAs semiconductor substrate. Each array antenna can be excited simultaneously by spatially reconfiguring the optical probe beam and the THz electric field can be recorded using 8 channel lock-in amplifiers. By scanning the probe beam along the length of the array antenna, a 2D image can be obtained with amplitude, phase and frequency information.
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresponses have not yet been discovered in light-emitting diodes (LEDs), letting alone employing them as fast, cost effective,compact, and room-temperature-operating THz detectors and cameras. Here we report ubiquitously available LEDs exhibited gigantic and fast photovoltaic signals with excellent signal-to-noise ratios when being illuminated by THz field strengths >50 kV/cm. We also successfully demonstrated THz-LED detectors and camera prototypes. These unorthodox THz detectors exhibited high responsivities (>1 kV/W) with response time shorter than those of pyroelectric detectors by four orders of magnitude. The detection mechanism was attributed to THz-field-induced nonlinear impact ionization and Schottky contact. These findings not only help deepen our understanding of strong THz field-matter interactions but also greatly contribute to the applications of strong-field THz diagnosis.
Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism: photoexcited carriers rapidly thermalize due to strong electron-electron interactions, but lose energy to the lattice more slowly. The electron temperature gradient drives electron diffusion, and asymmetry due to local gating or dissimilar contact metals produces a net current via the thermoelectric effect. Here we demonstrate a graphene thermoelectric THz photodetector with sensitivity exceeding 10 V/W (700 V/W) at room temperature and noise equivalent power less than 1100 pW/Hz^1/2 (20 pW/Hz^1/2), referenced to the incident (absorbed) power. This implies a performance which is competitive with the best room-temperature THz detectors for an optimally coupled device, while time-resolved measurements indicate that our graphene detector is eight to nine orders of magnitude faster than those. A simple model of the response, including contact asymmetries (resistance, work function and Fermi-energy pinning) reproduces the qualitative features of the data, and indicates that orders-of-magnitude sensitivity improvements are possible.
We propose and experimentally demonstrate a method of polarization-sensitive quantitative phase imaging using two photo detectors. Instead of recording wide-field interference patterns, finding the modulation patterns maximizing focused intensities in terms of the polarization states enables polarization-dependent quantitative phase imaging without the need for a reference beam and an image sensor. The feasibility of the present method is experimentally validated by reconstructing Jones matrices of various samples including a polystyrene microsphere, a maize starch granule, and a rat retinal nerve fiber layer. Since the present method is simple and sufficiently general, we expect that it may offer solutions for quantitative phase imaging of birefringent materials.