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Register a new userIndividually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
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Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these quantum dots, which is necessary for controlling quantum states. We here report the fabrication of double quantum dot devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrifical epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbook-like charge stability diagrams, a discrete energy spectrum and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments.
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We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.
The transport through a quantum wire exposed to two magnetic spikes in series is modeled. We demonstrate that quantum dots can be formed this way which couple to the leads via magnetic barriers. Conceptually, all quantum dot states are accessible by transport experiments. The simulations show Breit-Wigner resonances in the closed regime, while Fano resonances appear as soon as one open transmission channel is present. The system allows to tune the dots confinement potential from sub-parabolic to superparabolic by experimentally accessible parameters.
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures.
The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $phi$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $phi$ vanishes. Only if these underlying symmetries are broken the supercurrent for $phi=0$ may be finite [3-5]. This corresponds to a ground state of the junction being offset by a phase $phi_{0}$, different from 0 or $pi$. Here, we report such a Josephson $phi_{0}$-junction based on a nanowire quantum dot. We use a quantum interferometer device in order to investigate phase offsets and demonstrate that $phi_{0}$ can be controlled by electrostatic gating. Our results have possible far reaching implications for superconducting flux and phase defined quantum bits as well as for exploring topological superconductivity in quantum dot systems.
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