Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectric field switching of the uniaxial magnetic anisotropy of an antiferromagnet
165
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage for their ultrafast spin dynamics and vanishingly small stray field. However, the switching of magnetic anisotropy of antiferromagnets via electric field remains elusive. Here we use ferroelastic strain from piezoelectric materials to switch the uniaxial magnetic anisotropy and the Neel order reversibly in antiferromagnetic Mn2Au films with an electric field of only a few kV/cm at room temperature. Owing to the uniaxial magnetic anisotropy, a ratchet-like switching behavior driven by the Neel spin-orbit torque is observed in the Mn2Au, which can be reversed by electric fields.
rate research
Read More
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful identifying different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures. Taking the iron monolayer as a matrix, we propose several interesting iron nanostructures with dramatically different magnetic properties. Such nanostructures could exhibit strong magnetoelectric effect. Our work may open a new avenue to the artificial design of electrically controlled magnetic devices.
Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.
Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BFO. Here, we demonstrate reversible E-field-induced switching of the magnetic state of the Co layer in Co/BFO (001) thin film heterostructures fabricated on SrTiO3 substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches by 45{deg} back and forth between the (100) and the (110) crystallographic directions of SrTiO3 as a result of alternating application of positive and negative voltage pulses on BFO. The coercivity of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. To explain the observation, we have also measured the exact canting angle of the antiferromagnetic G-type domain in BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and non-volatile magnetoelectronic devices.
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase of the exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
