Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCritical field anisotropy in the antiferroelectric switching of PbZrO3 films
235
0
0.0
(
0
)
Added by
Cosme Milesi-Brault
Publication date
2020
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.
rate research
Read More
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage for their ultrafast spin dynamics and vanishingly small stray field. However, the switching of magnetic anisotropy of antiferromagnets via electric field remains elusive. Here we use ferroelastic strain from piezoelectric materials to switch the uniaxial magnetic anisotropy and the Neel order reversibly in antiferromagnetic Mn2Au films with an electric field of only a few kV/cm at room temperature. Owing to the uniaxial magnetic anisotropy, a ratchet-like switching behavior driven by the Neel spin-orbit torque is observed in the Mn2Au, which can be reversed by electric fields.
The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduced charge defects into the sample and numerically investigated their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding antiferroelectric phase transformation and optimizing the energy storage property in experiments.
Magnetization reversal in exchange-spring magnet films has been investigated by a First Order Reversal Curve (FORC) technique and vector magnetometry. In Fe/epitaxial-SmCo films, the reversal proceeds by a reversible rotation of the Fe soft layer, followed by an irreversible switching of the SmCo hard layer. The switching fields are clearly manifested by separate steps in both longitudinal and transverse hysteresis loops, as well as sharp boundaries in the FORC distribution. In FeNi/polycrystalline-FePt films, particularly with thin FeNi, the switching fields are masked by the smooth and step-free major loop. However, the FORC diagram still displays a distinct onset of irreversible switching and transverse hysteresis loops exhibit a pair of peaks, whose amplitude is larger than the maximum possible contribution from the FeNi layer alone. This suggests that the FeNi and FePt layers reverse in a continuous process via a vertical spiral. The successive vs. continuous rotation of the soft/hard layer system is primarily due to the different crystal structure of the hard layer, which results in different anisotropies.
We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be smaller than the Walker field, thereby allowing for the observation of the steady and precessional flow regimes. The domain wall width and damping parameters are determined self-consistently. The damping, 30 times larger than the one deduced from ferromagnetic resonance, is shown to essentially originate from the non-conservation of the magnetization modulus. An unpredicted damping resonance and a dissipation regime associated with the existence of horizontal Bloch lines are also revealed.
The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magnetisation of those films drops to 0.2~MA/m and the coercivity is increased to 1~T. Time-resolved magneto-optical Kerr effect (TR-MOKE) is used to probe the high-frequency dynamics of Mn--Ga. The ferromagnetic resonance frequency extrapolated to zero-field is found to be 125~GHz with a Gilbert damping, $alpha$, of 0.019. The anisotropy field is determined from both SQUID and TR-MOKE to be 4.5~T, corresponding to an effective anisotropy density of 0.81~MJ/m$^3$. Given the large anisotropy field of the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film, pulsed magnetic fields up to 60~T are used to determine the field strength required to saturate the film in the plane. For this, the extraordinary Hall effect was employed as a probe of the local magnetisation. By integrating the reconstructed in--plane magnetisation curve, the effective anisotropy energy density for Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ is determined to be 1.23~MJ/m$^3$.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
