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Register a new userGiant modulation of the magnetic domain size induced by an electric field
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The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase of the exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.
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Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.
The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.
The inclination of the magnetic domain wall plane in electric field is observed. The simple theoretical model of this phenomenon that takes into account the spin flexoelectricity is proposed. The value of electric polarization of the magnetic domain wall is estimated as 0.3{mu}C/m^2 that agrees well with the results of electric field driven magnetic domain wall motion measurements.
A quantized version of the magnetoelectric effect, known as the topological magnetoelectric effect, can exist in a time-reversal invariant topological insulator with all its surface states gapped out by magnetism. This topological phase, called the axion insulator phase, has been theoretically proposed but is still lack of conclusive experimental evidence due to the small signal of topological magnetoelectric effect. In this work, we propose that the dynamical in-plane magnetization in an axion insulator can generate a pseudo-electric field, which acts on the surface state of topological insulator films and leads to the non-zero response current. Strikingly, we find that the current at magnetic resonance (either ferromagnetic or anti-ferromagnetic) is larger than that of topological magnetoelectric effect by several orders of magnitude, and thereby serves as a feasible smoking gun to confirm the axion insulator phase in the candidate materials.
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field driven magnetic domain wall motion is demonstrated for epitaxial Fe films on BaTiO$_3$ with in-plane and out-of-plane polarized domains. In this system, magnetic domain wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric field strength.
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