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Register a new userOn the accuracy of conductance quantization in spin-Hall insulators
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In contrast to the case of ordinary quantum Hall effect, the resistance of ballistic helical edge channels in typical quantum spin-Hall experiments is non-vanishing, additive and poorly quantized. Here we present a simple argument connecting this qualitative difference with a spin relaxation in the current/voltage leads in an experimentally relevant multi-terminal bar geometry. Both the finite lead resistance and the spin relaxation contribute to a non-vanishing four-terminal edge resistance, explaining poor quantization quality. We show that corrections to the four-terminal and two-terminal resistances in the limit of strong spin relaxation are opposite in sign, making a measurement of the spin relaxation resistance feasible, and estimate the magnitude of the effect in HgTe-based quantum wells.
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The quest for non-Abelian quasiparticles has inspired decades of experimental and theoretical efforts, where the scarcity of direct probes poses a key challenge. Among their clearest signatures is a thermal Hall conductance with quantized half-integer value in natural units $ pi^2 k_B^2 T /3 h$ ($T$ is temperature, $h$ the Planck constant, $k_B$ the Boltzmann constant). Such a value was indeed recently observed in a quantum-Hall system and a magnetic insulator. We show that a non-topological thermal metal phase that forms due to quenched disorder may disguise as a non-Abelian phase by well approximating the trademark quantized thermal Hall response. Remarkably, the quantization here improves with temperature, in contrast to fully gapped systems. We provide numerical evidence for this effect and discuss its possible implications for the aforementioned experiments.
We investigate the Hall conductance of a two-dimensional Chern insulator coupled to an environment causing gain and loss. Introducing a biorthogonal linear response theory, we show that sufficiently strong gain and loss lead to a characteristic non-analytical contribution to the Hall conductance. Near its onset, this contribution exhibits a universal power-law with a power 3/2 as a function of Dirac mass, chemical potential and gain strength. Our results pave the way for the study of non-Hermitian topology in electronic transport experiments.
We propose a surface-edge state theory for half quantized Hall conductance of surface states in topological insulators. The gap opening of a single Dirac cone for the surface states in a weak magnetic field is demonstrated. We find a new surface state resides on the surface edges and carries chiral edge current, resulting in a half-quantized Hall conductance in a four-terminal setup. We also give a physical interpretation of the half quantized conductance by showing that this state is the product of splitting of a boundary bound state of massive Dirac fermions which carries a conductance quantum.
We present first numerical studies of the disorder effect on the recently proposed intrinsic spin Hall conductance in a three dimensional (3D) lattice Luttinger model. The results show that the spin Hall conductance remains finite in a wide range of disorder strength, with large fluctuations. The disorder-configuration-averaged spin Hall conductance monotonically decreases with the increase of disorder strength and vanishes before the Anderson localization takes place. The finite-size effect is also discussed.
We study numerically the charge conductance distributions of disordered quantum spin-Hall (QSH) systems using a quantum network model. We have found that the conductance distribution at the metal-QSH insulator transition is clearly different from that at the metal-ordinary insulator transition. Thus the critical conductance distribution is sensitive not only to the boundary condition but also to the presence of edge states in the adjacent insulating phase. We have also calculated the point-contact conductance. Even when the two-terminal conductance is approximately quantized, we find large fluctuations in the point-contact conductance. Furthermore, we have found a semi-circular relation between the average of the point-contact conductance and its fluctuation.
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