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Register a new userUniversal Hall conductance scaling in non-Hermitian Chern insulators
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We investigate the Hall conductance of a two-dimensional Chern insulator coupled to an environment causing gain and loss. Introducing a biorthogonal linear response theory, we show that sufficiently strong gain and loss lead to a characteristic non-analytical contribution to the Hall conductance. Near its onset, this contribution exhibits a universal power-law with a power 3/2 as a function of Dirac mass, chemical potential and gain strength. Our results pave the way for the study of non-Hermitian topology in electronic transport experiments.
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The interplay between non-Hermiticity and topology opens an exciting avenue for engineering novel topological matter with unprecedented properties. While previous studies have mainly focused on one-dimensional systems or Chern insulators, here we investigate topological phase transitions to/from quantum spin Hall (QSH) insulators driven by non-Hermiticity. We show that a trivial to QSH insulator phase transition can be induced by solely varying non-Hermitian terms, and there exists exceptional edge arcs in QSH phases. We establish two topological invariants for characterizing the non-Hermitian phase transitions: i) with time-reversal symmetry, the biorthogonal $mathbb{Z}_2$ invariant based on non-Hermitian Wilson loops, and ii) without time-reversal symmetry, a biorthogonal spin Chern number through biorthogonal decompositions of the Bloch bundle of the occupied bands. These topological invariants can be applied to a wide class of non-Hermitian topological phases beyond Chern classes, and provides a powerful tool for exploring novel non-Hermitian topological matter and their device applications.
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
Eigenenergies of a non-Hermitian system without parity-time symmetry are complex in general. Here, we show that the chiral boundary states of non-Hermitian topological insulators without parity-time symmetry can be Hermitian with real eigenenergies under certain conditions. Our finding allows one to construct Hermitian chiral edge and hinge states from non-Hermitian two-dimensional Chern insulators and three-dimensional second-order topological insulators, respectively. Such Hermitian chiral boundary channels have perfect transmission coefficients (quantized values) and are robust against disorders. Furthermore, a non-Hermitian topological insulator can undergo the topological Anderson insulator transition from a topological trivial non-Hermitian metal or insulator to a topological Anderson insulator with quantized transmission coefficients at finite disorders.
We propose a two-dimensional non-Hermitian Chern insulator with inversion symmetry, which is anisotropic and has staggered gain and loss in both x and y directions. In this system, conventional bulk-boundary correspondence holds. The Chern number is a topological invariant that accurately predicts the topological phase transition and the existence of helical edge states in the topologically nontrivial gapped phase. In the gapless phase, the band touching points are isolated and protected by the symmetry. The degenerate points alter the system topology, and the exceptional points can destroy the existence of helical edge states. Topologically protected helical edge states exist in the gapless phase for the system under open boundary condition in one direction, which are predicted by the winding number associated with the vector field of average values of Pauli matrices. The winding number also identifies the detaching points between the edge states and the bulk states in the energy bands. The non-Hermiticity also supports a topological phase with zero Chern number, where a pair of in-gap helical edge states exists. Our findings provide insights into the symmetry protected non-Hermitian topological insulators.
Recent studies of disorder or non-Hermiticity induced topological insulators inject new ingredients for engineering topological matter. Here we consider the effect of purely non-Hermitian disorders, a combination of these two ingredients, in a 1D chiral symmetric lattice with disordered gain and loss. The increasing disorder strength can drive a transition from trivial to topological insulators, characterizing by the change of topological winding number defined by localized states in the gapless and complex bulk spectra. The non-Hermitian critical behaviors are characterized by the biorthogonal localization length of zero energy edge modes, which diverges at the critical transition point and establishes the bulk-edge correspondence. Furthermore, we show that the bulk topology may be experimentally accessed by measuring the biorthogonal chiral displacement $mathcal{C}$, which converges to the winding number through time-averaging and can be extracted from proper Ramsey-interference sequences. We propose a scheme to implement and probe such non-Hermitian disorder driven topological insulators using photons in coupled micro-cavities.
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