Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPure spin current transport in a SiGe alloy
74
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{rm 0.1}$Ge$_{rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n sim$ 5.0 $times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si$_{rm 0.1}$Ge$_{rm 0.9}$ layer at low temperatures are reliably estimated to be $sim$ 0.5 $mu$m and $sim$ 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.
rate research
Read More
161 -
Matthias Althammer
, Joynarayan Mukherjee
, Stephan Geprags andn Sebastian T. B. Goennenwein
2016
We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer, and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a $12;mathrm{nm}$ thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures.
We predict a mechanism to generate a pure spin current in a two-dimensional topological insulator. As the magnetic impurities exist on one of edges of the two-dimensional topological insulator, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. So the conductance plateaus with the half-integer values $e^2/h$ can be obtained in the gap induced by magnetic impurities, which means that the pure spin current can be induced in the sample. We also find that the pure spin current is insensitive to weak disorder. The mechanism to generate pure spin currents is generalized for two-dimensional topological insulators.
Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose associated spins are well-isolated from their environment giving them long coherence times; however, spin interactions are important for transport, entanglement, and read-out. Here, we report direct measurement of pure spin transport - free of any charge motion - within a nanoscale quasi 1D spin wire, and find a spin diffusion length ~ 700 nm. We exploit the statistical fluctuations of a small number of spins ($sqrt{N}$ < 100 net spins) which are in thermal equilibrium and have no imposed polarization gradient. The spin transport proceeds by means of magnetic dipole interactions that induce flip-flop transitions, a mechanism that can enable highly efficient, even reversible, pure spin currents. To further study the dynamics within the spin wire, we implement a magnetic resonance protocol that improves spatial resolution and provides nanoscale spectroscopic information which confirms the observed spin transport. This spectroscopic tool opens a potential route for spatially encoding spin information in long-lived nuclear spin states. Our measurements probe intrinsic spin dynamics at the nanometre scale, providing detailed insight needed for practical devices which seek to control spin.
We demonstrate a spin pump to generate pure spin current of tunable intensity and polarization in the absence of charge current. The pumping functionality is achieved by means of an ac gate voltage that modulates the Rashba constant dynamically in a local region of a quantum channel with both static Rashba and Dresselhaus spin-orbit interactions. Spin-resolved Floquet scattering matrix is calculated to analyze the whole scattering process. Pumped spin current can be divided into spin-preserved transmission and spin-flip reflection parts. These two terms have opposite polarization of spin current and are competing with each other. Our proposed spin-based device can be utilized for non-magnetic control of spin flow by tuning the ac gate voltage and the driving frequency.
We suggest a new practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the $omega$ and $2omega$ laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
