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Register a new userObservation of Pure Spin Transport in a Diamond Spin Wire
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Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose associated spins are well-isolated from their environment giving them long coherence times; however, spin interactions are important for transport, entanglement, and read-out. Here, we report direct measurement of pure spin transport - free of any charge motion - within a nanoscale quasi 1D spin wire, and find a spin diffusion length ~ 700 nm. We exploit the statistical fluctuations of a small number of spins ($sqrt{N}$ < 100 net spins) which are in thermal equilibrium and have no imposed polarization gradient. The spin transport proceeds by means of magnetic dipole interactions that induce flip-flop transitions, a mechanism that can enable highly efficient, even reversible, pure spin currents. To further study the dynamics within the spin wire, we implement a magnetic resonance protocol that improves spatial resolution and provides nanoscale spectroscopic information which confirms the observed spin transport. This spectroscopic tool opens a potential route for spatially encoding spin information in long-lived nuclear spin states. Our measurements probe intrinsic spin dynamics at the nanometre scale, providing detailed insight needed for practical devices which seek to control spin.
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Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{rm 0.1}$Ge$_{rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n sim$ 5.0 $times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si$_{rm 0.1}$Ge$_{rm 0.9}$ layer at low temperatures are reliably estimated to be $sim$ 0.5 $mu$m and $sim$ 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of spintronics or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device. While SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques. Here we present the first observation of a predicted spin-orbit gap in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily-measured linear conductance of the system.
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Matthias Althammer
, Joynarayan Mukherjee
, Stephan Geprags andn Sebastian T. B. Goennenwein
2016
We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer, and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a $12;mathrm{nm}$ thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures.
Electron transport in a new low-dimensional structure - the nuclear spin polarization induced quantum wire (NSPI QW) is theoretically studied. In the proposed system the local nuclear spin polarization creates the effective hyperfine field which confines the electrons with the spins opposite to the hyperfine field to the regions of maximal nuclear spin polarization. The influence of the nuclear spin relaxation and diffusion on the electron energy spectrum and on the conductance of the quantum wire is calculated and the experimental feasibility is discussed.
We have observed millisecond-long coherent evolution of nuclear spins in a quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is achieved by dynamic nuclear polarization in the breakdown regime of the Integer Quantum Hall Effect combined with pulsed Nuclear Magnetic Resonance. The excitation thresholds for the breakdown are significantly smaller than what would be expected for our sample and the direction of the nuclear polarization can be controlled by the voltage bias. As a four-level spin system, the device is equivalent to two qubits.
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