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Register a new userIon Implantation for Deterministic Single Atom Devices
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We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015.
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.
Triple donor devices have the potential to exhibit adiabatic tunneling via the CTAP (Coherent Tunneling Adiabatic Passage) protocol which is a candidate transport mechanism for scalable quantum computing. We examine theoretically the statistics of dopant placement using counted ion implantation by employing an analytical treatment of CTAP transport properties under hydrogenic assumptions. We determine theoretical device yields for proof of concept devices for different implant energies. In particular, we determine a significant theoretical device yield (~80%) for 14keV phosphorus in silicon with nominal 20nm spacing.
Quantum confinement in atomically-thin TMDCs enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic-force-microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal-boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. In particular, single-photon emission was observed at the indentation sites at 4 K. The emission exhibits photon anti-bunching behavior with a g(2)(0) value of ~0.3, intensity saturation and a linearly cross-polarized doublet. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
The topological Kondo (TK) model has been proposed in solid-state quantum devices as a way to realize non-Fermi liquid behaviors in a controllable setting. Another motivation behind the TK model proposal is the demand to demonstrate the quantum dynamical properties of Majorana fermions, which are at the heart of their potential use in topological quantum computation. Here we consider a junction of crossed Tonks-Girardeau gases arranged in a star-geometry (forming a Y -junction), and we perform a theoretical analysis of this system showing that it provides a physical realization of the topological Kondo model in the realm of cold atom systems. Using computer-generated holography, we experimentally implement a Y-junction suitable for atom trapping, with controllable and independent parameters. The junction and the transverse size of the atom waveguides are of the order of 5 micrometers, leading to favorable estimates for the Kondo temperature and for the coupling across the junction. Since our results show that all the required theoretical and experimental ingredients are available, this provides the demonstration of an ultracold atom device that may in principle exhibit the topological Kondo effect.
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