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Register a new userTetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs
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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neel temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
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We demonstrate that SrRuO3 and CaRuO3 thin films undergo a room temperature structural phase transition driven by the substrate imposed epitaxial biaxial strain. As tensile strain increases, ARuO3 (A=Ca, Sr) films transform from the orthorhombic phase which is usually observed in bulk SrRuO3 and CaRuO3 at room temperature, into a tetragonal phase which in bulk samples is only stable at higher temperatures. More importantly, we show that the observed phenomenon strongly affects the electronic and magnetic properties of ARuO3 thin films that are grown on different single crystal substrates which in turn offers the possibility to tune these properties.
The antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure is a promising material for the AFM spintronics. The resistivity measurements indicate the presence of defects about whose types and concentrations is more speculated as known. We confirmed vacancies on Mn or Cu sublattices and Mn$_{rm Cu}$ and Cu$_{rm Mn}$ antisites as most probable defects in CuMnAs by our new ab initio total energy calculations. We have estimated resistivities of possible defect types as well as resistivities of samples for which the X-ray structural analysis is available. In the latter case we have found that samples with Cu- and Mn-vacancies with low formation energies have also resistivities which agree well with the experiment. Finally, we have also calculated exchange interactions and estimated the Neel temperatures by using the Monte Carlo approach. A good agreement with experiment was obtained.
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is lacking. Here we show that skyrmions can be stabilized at zero field and room temperature at the interface of sputtered IrMn thin films exchange-coupled to a ferromagnetic layer. This was realised by replicating the skyrmionic spin texture of the ferromagnet in the antiferromagnet, via annealing above the blocking temperature of the ferromagnet/antiferromagnet bilayer. Using the high-spatial-resolution magnetic microscopy technique XMCD-PEEM, we observe the skyrmions within the IrMn interfacial layer from the XMCD signal of the uncompensated Mn spins at the interface. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We investigate the site-occupation of sublattices and the lattice parameters of three competing phases. We analyze the factors that determine which of the three conceivable structures will prevail. We then estimate formation energies of possible defects for the experimentally prepared lattice structure. Mn$_{rm Cu}$- and Cu$_{rm Mn}$-antisites as well as Mn$leftrightarrow$Cu swaps and vacancies on Mn or Cu sublattices were identified as possible candidates for defects in CuMnAs. We find that the interactions of the growing thin film with the substrate and with vacuum as well as the electron correlations are important for the phase stability while the effect of defects is weak. In the next step, using the tight-binding linear muffin-tin orbital method for the experimental structure, we estimate transport properties for systems containing defects with low formation energies. Finally, we determine the exchange interactions and estimate the Neel temperature of the AFM-CuMnAs alloy using the Monte Carlo approach. A good agreement of the calculated resistivity and Neel temperature with experimental data makes possible to draw conclusions concerning the competing phases.
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurements reveal significant TMR values of -18% at 2 K and -3% at 290 K. In addition, the TMR ratio follows a unique bias voltage dependence that has been theoretically predicted to be the signature of spin filtering in MTJs containing magnetic barriers. CoFe2O4 tunnel barriers therefore provide a model system to investigate spin filtering in a wide range of temperatures.
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