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Tetragonal CuMnAs alloy: role of defects

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 Added by Frantisek Maca
 Publication date 2018
  fields Physics
and research's language is English




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The antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure is a promising material for the AFM spintronics. The resistivity measurements indicate the presence of defects about whose types and concentrations is more speculated as known. We confirmed vacancies on Mn or Cu sublattices and Mn$_{rm Cu}$ and Cu$_{rm Mn}$ antisites as most probable defects in CuMnAs by our new ab initio total energy calculations. We have estimated resistivities of possible defect types as well as resistivities of samples for which the X-ray structural analysis is available. In the latter case we have found that samples with Cu- and Mn-vacancies with low formation energies have also resistivities which agree well with the experiment. Finally, we have also calculated exchange interactions and estimated the Neel temperatures by using the Monte Carlo approach. A good agreement with experiment was obtained.

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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neel temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We investigate the site-occupation of sublattices and the lattice parameters of three competing phases. We analyze the factors that determine which of the three conceivable structures will prevail. We then estimate formation energies of possible defects for the experimentally prepared lattice structure. Mn$_{rm Cu}$- and Cu$_{rm Mn}$-antisites as well as Mn$leftrightarrow$Cu swaps and vacancies on Mn or Cu sublattices were identified as possible candidates for defects in CuMnAs. We find that the interactions of the growing thin film with the substrate and with vacuum as well as the electron correlations are important for the phase stability while the effect of defects is weak. In the next step, using the tight-binding linear muffin-tin orbital method for the experimental structure, we estimate transport properties for systems containing defects with low formation energies. Finally, we determine the exchange interactions and estimate the Neel temperature of the AFM-CuMnAs alloy using the Monte Carlo approach. A good agreement of the calculated resistivity and Neel temperature with experimental data makes possible to draw conclusions concerning the competing phases.
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The nonlinear Hall effect is mostly studied as a Berry curvature dipole effect in nonmagnetic materials, which depends linearly on the relaxation time. On the other hand, in magnetic materials, an intrinsic nonlinear Hall effect can exist, which does not depend on the relaxation time. Here we show that the intrinsic nonlinear Hall effect can be observed in an antiferromagnetic metal: tetragonal CuMnAs, and the corresponding conductivity can reach the order of mA/V$^2$ based on density functional theory calculations. The dependence on the chemical potential of such nonlinear Hall conductivity can be qualitatively explained by a tilted massive Dirac model. Moreover, we demonstrate its strong temperature-dependence and briefly discuss its competition with the second order Drude conductivity. Finally, a complete survey of magnetic point groups are presented, providing guidelines for finding candidate materials with the intrinsic nonlinear Hall effect.
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