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Register a new userRoom temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers
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We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurements reveal significant TMR values of -18% at 2 K and -3% at 290 K. In addition, the TMR ratio follows a unique bias voltage dependence that has been theoretically predicted to be the signature of spin filtering in MTJs containing magnetic barriers. CoFe2O4 tunnel barriers therefore provide a model system to investigate spin filtering in a wide range of temperatures.
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Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neel temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
In this work we report a study of the magnetic behavior of ferrimagnetic oxide CoFe2O4 treated by mechanical milling with different grinding balls. The cobalt ferrite nanoparticles were prepared using a simple hydrothermal method and annealed at 500oC. The non-milled sample presented coercivity of about 1.9 kOe, saturation magnetization of 69.5 emu/g, and a remanence ratio of 0.42. After milling, two samples attained coercivity of 4.2 and 4.1 kOe, and saturation magnetization of 67.0 and 71.4 emu/g respectively. The remanence ratio MR/MS for these samples increase to 0.49 and 0.51, respectively. To investigate the influence of the microstructure on the magnetic behavior of these samples, we used X-ray powder diffraction (XPD), transmission electron microscopy (TEM), and vibrating sample magnetometry (VSM). The XPD analysis by the Williamson-Hall plot was used to estimate the average crystallite size and strain induced by mechanical milling in the samples.
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