No Arabic abstract
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is lacking. Here we show that skyrmions can be stabilized at zero field and room temperature at the interface of sputtered IrMn thin films exchange-coupled to a ferromagnetic layer. This was realised by replicating the skyrmionic spin texture of the ferromagnet in the antiferromagnet, via annealing above the blocking temperature of the ferromagnet/antiferromagnet bilayer. Using the high-spatial-resolution magnetic microscopy technique XMCD-PEEM, we observe the skyrmions within the IrMn interfacial layer from the XMCD signal of the uncompensated Mn spins at the interface. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.
In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $alpha$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature.
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neel temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{mathrm{eb}}$=92 Oe and a coercive field of H$_{mathrm{c}}$=89 Oe for a 12.5 nm thick BiFeO$_3$ film with a 2 nm thick Co layer. The unidirectional anisotropy is clearly visible in in-plane rotational MOKE measurements. AMR measurements reveal a strongly increasing coercivity with decreasing temperature, but no significant change in the exchange bias field.
The magnetic properties of trilayers consisting of a diluted magnetic alloy, CuMn (Cu0.99Mn0.01), a soft ferromagnet, Py(Ni0.8Fe0.2), and an antiferromagnet, alpha-Fe2O3, were investigated. The samples, grown by UHV magnetron sputtering, were magnetically characterized in the temperature range T = 3-100 K. Typical exchange bias features, namely clear hysteresis cycle shifts and coercivity enhancements, were observed. Moreover the presence of an inverse bias, which had been already reported for spin glass-based structures, was also obtained in a well defined range of temperatures and CuMn thicknesses.