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Register a new userIntrinsic Anomalous Hall Effect in Magneto-Chiral States
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We show that a finite Hall effect in zero applied magnetic field occurs for partially filled bands in certain time-reversal violating states with zero net flux per unit-cell. These states are the Magneto-chiral states with parameters in the effective one-particle Hamiltonian such that they do not satisfy the Haldane-type constraints for topological electronic states. The results extend an earlier discussion of the Kerr effect observed in the cuprates but may be applicable to other experimental situations.
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We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moire miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Delta/k_Bapprox 27$~K is larger than the Curie temperature for magnetic ordering $T_Capprox 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.
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The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.
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