Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIntrinsic quantized anomalous Hall effect in a moire heterostructure
154
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moire miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Delta/k_Bapprox 27$~K is larger than the Curie temperature for magnetic ordering $T_Capprox 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.
rate research
Read More
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic metals. Here, we investigate the recently discovered AHE in the chiral antiferromagnet Mn3Sn by measuring a thermal analog of the AHE, known as an anomalous thermal Hall effect (ATHE). The amplitude of the ATHE scales with the anomalous Hall conductivity of Mn3Sn over a wide temperature range, demonstrating that the AHE of Mn3Sn arises from a dissipationless intrinsic mechanism associated with the Berry curvature. Moreover, we find that the dissipationless AHE is significantly stabilized by shifting the Fermi level toward the magnetic Weyl points. Thus, in Mn3Sn, the Berry curvature emerging from the proposed magnetic Weyl fermion state is a key factor for the observed AHE and ATHE.
We have theoretically explored the intrinsic spin Hall effect (SHE) in the iron-based superconductor family with a variety of materials. The study is motivated by an observation that, in addition to an appreciable spin-orbit coupling in the Fe 3d states, a character of the band structure in which Dirac cones appear below the Fermi energy may play a crucial role in producing a large SHE. Our investigation does indeed predict a substantially large spin Hall conductivity in the heavily hole-doped regime such as KFe$_2$As$_2$. The magnitude of the SHE has turned out to be comparable with that for Pt despite a relatively small spin-orbit coupling, which we identify to come from a huge contribution from the gap opening induced by the spin-orbit coupling at the Dirac point, which can become close to the Fermi energy for the heavy hole doping.
Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength of interfacial magnetic proximity effect (MPE) is still too weak to achieve the quantum anomalous Hall effect and many other topological quantum phenomena. Recently, a new approach based on intercalation of atomic layers of MI, referred to as magnetic extension, was proposed to realize strong MPE [2D Mater. 4, 025082(2017)]. Motivated by this proposal, here, we study a magnetic extension system prepared by molecular beam epitaxy growth of MnSe thin films on topological insulator (Bi,Sb)2Te3. Direct evidence is obtained for intercalation of MnSe atomic layer into a few quintuple layers of (Bi,Sb)2Te3, forming either a double magnetic septuple layer (SL) or an isolated single SL at the interface, where one SL denotes a van der Waals building block consisting of B-A-B-Mn-B-A-B (A=Bi1-xSbx, B= Te1-ySey). The two types of interfaces (namely TI/mono-SL and TI/bi-SL) have different MPE, which is manifested as distinctively different transport behaviors. Specifically, the mono-SL induces a spinflip transition with a sharp change at small magnetic field in the anomalous Hall effect of TI layers, while the bi-SL induces a spin-flop transition with a slow change at large field. Our work demonstrates a useful platform to realize the full potential of the magnetic extension approach for pursuing novel topological physics and related device applications.
Exploration of the novel relationship between magnetic order and topological semimetals has received enormous interest in a wide range of both fundamental and applied research. Here we predict that soft ferromagnetic (FM) material EuB6 can achieve multiple topological semimetal phases by simply tuning the direction of the magnetic moment. Explicitly, EuB6 is a topological nodal-line semimetal when the moment is aligned along the [001] direction, and it evolves into a Weyl semimetal with three pairs of Weyl nodes by rotating the moment to the [111] direction. Interestingly, we identify a novel semimetal phase featuring the coexistence of a nodal line and Weyl nodes with the moment in the [110] direction. Topological surface states and anomalous Hall conductivity, which is sensitive to the magnetic order, have been computed and are expected to be experimentally observable. Large-Chern-number quantum anomalous Hall effect can be realized in its [111]-oriented quantum-well structure.
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
