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We report on the experimental observation of an anomalous Hall effect (AHE) in highly oriented pyrolytic graphite samples. The overall data indicate that the AHE in graphite can be self-consistently understood within the frameworks of the magnetic-field-driven excitonic pairing models.
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The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at $T_mathrm{N} sim 15.6$ K and $T_mathrm{CDW} sim 140$ K, respectively. In the AFM state, when the magnetic field is applied along the $c$-axis direction, EuAl$_4$ undergoes a series of metamagnetic transitions. Within this field range, we observe a clear hump-like anomaly in the Hall resistivity, representing part of the anomalous Hall resistivity. By considering different scenarios, we conclude that such a hump-like feature is most likely a manifestation of the topological Hall effect, normally occurring in noncentrosymmetric materials known to host nontrivial topological spin textures. In view of this, EuAl$_4$ would represent a rare case where the topological Hall effect not only arises in a centrosymmetric structure, but it also coexists with CDW order.
We present magnetotransport data on the ferrimagnet GdMn$_6$Sn$_6$. From the temperature dependent data we are able to extract a large instrinsic contribution to the anomalous Hall effect $sigma_{xz}^{int} sim$ 32 $Omega^{-1}cm^{-1}$ and $sigma_{xy}^{int} sim$ 223 $Omega^{-1}cm^{-1}$, which is comparable to values found in other systems also containing kagome nets of transition metals. From our transport anisotropy, as well as our density functional theory calculations, we argue that the system is electronically best described as a three dimensional system. Thus, we show that reduced dimensionality is not a strong requirement for obtaining large Berry phase contributions to transport properties. In addition, the coexistence of rare-earth and transition metal magnetism makes the hexagonal MgFe$_6$Ge$_6$ structure type a promising system to tune the electronic and magnetic properties in future studies.
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $rho_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $rho_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $rho_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.
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