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Laser emission with excitonic gain in a ZnO planar microcavity

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 Added by Thierry Guillet
 Publication date 2011
  fields Physics
and research's language is English




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The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.

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155 - Gu Xu , Dingzhou Li 1999
We present a comprehensive theoretical description of quantum well exciton-polaritons imbedded in a planar semiconductor microcavity. The exact non-local dielectric response of the quantum well exciton is treated in detail. The 4-spinor structure of the hole subband in the quantum well is considered, including the pronounced band mixing effect. The scheme is self-contained and can be used to treat different semiclassical aspects of the microcavity properties. As an example, we analyze the selection rules for the exciton-cavity mode coupling for different excitons.
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81 - Qijun Ren , Jian Lu , H. H. Tan 2010
We demonstrate the selective coupling of a single quantum dot exciton spin state with the cavity mode in a quantum dot-micropillar cavity system. By tuning an external magnetic field, the Zeeman splitted exciton spin states coupled differently with the cavity due to field manipulated energy detuning. We found a 26 times increase in the emission intensity of spin-up exciton state with respect to spin-down exciton state at resonance due to Purcell effect, which gives rise to the selective enhancement of light emission with the circular polarization degree up to 93%. A four-level rate equation model is developed and quantitatively agrees well with our experimental data. Our results pave the way for the realization of future quantum light sources and the quantum information processing applications.
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Here we report lasing action in limac{c}on-shaped GaAs microdisks with quantum dots (QDs) embedded. Although the intracavity ray dynamics is predominantly chaotic, high-$Q$ modes are concentrated in the region $chi > chi_c$ as a result of wave localization. Strong optical confinement by total internal reflection leads to very low lasing threshold. Our measurements show that all the lasing modes have output in the same direction, regardless of their wavelengths and intracavity mode structures. This universal emission direction is determined by directed phase space flow of optical rays in the open chaotic cavity. The divergence angle of output beam is less than 40 degree. The unidirectionality proves to be robust against small deviations of the real cavity shape and size from the designed values.
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