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Register a new userChaotic Microcavity Laser with Low threshold and Unidirectional Output
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Here we report lasing action in limac{c}on-shaped GaAs microdisks with quantum dots (QDs) embedded. Although the intracavity ray dynamics is predominantly chaotic, high-$Q$ modes are concentrated in the region $chi > chi_c$ as a result of wave localization. Strong optical confinement by total internal reflection leads to very low lasing threshold. Our measurements show that all the lasing modes have output in the same direction, regardless of their wavelengths and intracavity mode structures. This universal emission direction is determined by directed phase space flow of optical rays in the open chaotic cavity. The divergence angle of output beam is less than 40 degree. The unidirectionality proves to be robust against small deviations of the real cavity shape and size from the designed values.
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Titanium doped sapphire (Ti:sapphire) is a laser gain material with broad gain bandwidth benefiting from the material stability of sapphire. These favorable characteristics of Ti:sapphire have given rise to femtosecond lasers and optical frequency combs. Shaping a single Ti:sapphire crystal into a millimeter sized high quality whispering gallery mode resonator ($Qsim10^8$) reduces the lasing threshold to 14.2 mW and increases the laser slope efficiency to 34%. The observed lasing can be both multi-mode and single-mode. This is the first demonstration of a Ti:sapphire whispering-gallery laser. Furthermore, a novel method of evaluating the gain in Ti:sapphire in the near infrared region is demonstrated by introducing a probe laser with a central wavelength of 795 nm. This method results in decreasing linewidth of the modes excited with the probe laser, consequently increasing their $Q$. These findings open avenues for the usage of whispering gallery mode resonators as cavities for the implementation of compact Ti:sapphire lasers. Moreover, Ti:sapphire can also be utilized as an amplifier inside its gain bandwidth by implementing a pump-probe configuration.
Ultralow noise, yet tunable lasers are a revolutionary tool in precision spectroscopy, displacement measurements at the standard quantum limit, and the development of advanced optical atomic clocks. Further applications include LIDAR, coherent communications, frequency synthesis, and precision sensors of strain, motion, and temperature. While all applications benefit from lower frequency noise, many also require a laser that is robust and compact. Here, we introduce a dual-microcavity laser that leverages one chip-integrable silica microresonator to generate tunable 1550 nm laser light via stimulated Brillouin scattering (SBS) and a second microresonator for frequency stabilization of the SBS light. This configuration reduces the fractional frequency noise to $7.8times10^{-14} 1/sqrt{Hz}$ at 10 Hz offset, which is a new regime of noise performance for a microresonator-based laser. Our system also features terahertz tunability and the potential for chip-level integration. We demonstrate the utility of our dual-microcavity laser by performing optical spectroscopy with hertz-level resolution.
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ sim $ 1.05$times 10^{^5}$ ). C-band laser emission with $ sim $1530 nm and $ sim $1560 nm from the high-Q erbium-doped LNOI microdisk was demonstrated both with 974 nm and 1460 nm pumping, and the latter has better thermal stability. This microlaser would play an important role in the photonic integrated circuits of lithium niobate platform.
We present a microcavity structure with a shifted photonic stop-band to enable efficient non-resonant injection of a polariton condensate with spectrally broad femtosecond pulses. The concept is demonstrated theoretically and confirmed experimentally for a planar GaAs/AlGaAs multilayer heterostructure pumped with ultrashort near-infrared pulses while photoluminescence is collected to monitor the optically injected polariton density. As the excitation wavelength is scanned, a regime of polariton condensation can be reached in our structure at a consistently lower fluence threshold than in a state-of-the-art conventional microcavity. Our microcavity design improves the polariton injection efficiency by a factor of 4, as compared to a conventional microcavity design, when broad excitation pulses are centered at a wavelength of 740 nm. Most remarkably, this improvement factor reaches 270 when the excitation wavelength is centered at 750 nm.
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