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Register a new userQuantum oscillations observed in graphene at microwave frequencies
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We have measured the microwave conductance of mechanically exfoliated graphene at frequencies up to 8.5 GHz. The conductance at 4.2 K exhibits quantum oscillations, and is independent of the frequency.
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We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.
We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The resonator frequency is found to shift both down and up close to conductance resonance of the dot corresponding to a change of sign of the reactance of the system from capacitive to inductive. The observations are consistent with a scattering matrix model. The sign of the reactance depends on the detuning of the dot from conductance resonance and on the magnitude of the tunnel rate to the lead with respect to the resonator frequency. Inductive response is observed on a conductance resonance, when tunnel coupling and temperature are sufficiently small compared to the resonator frequency.
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $approx$ 13 GHz to heavily phosphorous doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy $approx$ 9 meV consistent with the first excited state of a single $P$ donor in silicon. The relaxation rate of this first excited state to ground is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under rf excitations.
We have measured quantum interference between two single microwave photons trapped in a superconducting resonator, whose frequencies are initially about 6 GHz apart. We accomplish this by use of a parametric frequency conversion process that mixes the mode currents of two cavity harmonics through a superconducting quantum interference device, and demonstrate that a two-photon entanglement operation can be performed with high fidelity.
Locally-gated single-layer graphene sheets have unusual discrete energy states inside the potential barrier induced by a finite-width gate. These states are localized outside the Dirac cone of continuum states and are responsible for novel quantum transport phenomena. Specifically, the longitudinal (along the barrier) conductance exhibits oscillations as a function of barrier height and/or width, which are both controlled by a nearby gate. The origin of these oscillations can be traced back to singularities in the density of localized states. These graphene conductance-oscillations resemble the Shubnikov-de-Haas (SdH) magneto-oscillations; however, here these are driven by an electric field instead of a magnetic field.
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