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Register a new userThermionic Emission as a tool to study transport in undoped nFinFETs
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Added by
Giuseppe Carlo Tettamanzi Dr
Publication date
2010
fields
Physics
and research's language is
English
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Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics.
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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects that arise from coherent tunneling of electrons in the dot.
Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
The dynamics of the fission process is expected to affect the evaporation residue cross section because of the fission hindrance due to the nuclear viscosity. Systems of intermediate fissility constitute a suitable environment for testing such hypothesis, since they are characterized by evaporation residue cross sections comparable or larger than the fission ones. Observables related to emitted charged particle, due to their relatively high emission probability, can be used to put stringent constraints on models describing the excited nucleus decay and to recognize the effects of fission dynamics. In this work model simulations are compared with the experimental data collected via the ^{32}S + ^{100}Mo reaction at E_{lab}= 200 MeV. By comparing an extended set of evaporation channel observables the limits of the statistical model and the large improvement coming by using a dynamical model are evidenced. The importance of using a large angular covering apparatus to extract the observable is stressed. The opportunity to measure more sensitive observables by a new detection device in operation at LNL are also discussed.
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