No Arabic abstract
The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 micron band, with room temperature, continuous-wave thresholds as low as 1 microWatt of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi~16% and out-coupling efficiency in excess of 28%.
We characterize a high-finesse Fabry-Perot resonator for coupling with single neutral atoms. Our cavity consists of two mirrors with different reflectivities: One has minimal optical loss, and the other high transmission loss where more than 90% of the intracavity photons would be emitted. Cavity finesse, birefringent effects, and mechanical resonances are measured using the lasers at 780, 782, and 795 nm. In order to obtain cavity geometric parameters, we drive the adjacent longitudinal or transverse modes with two lasers simultaneously, and measure those frequencies using a precision wavelength meter (WLM). A major novelty of this method is that the parameters uncertainty is solely determined by the resolution of the WLM, eliminating all of the temporal environment fluctuations. Moreover, the technique with two lasers consists of a vital approach for determining geometric parameters of a short cavity, with a free spectral range on the order of THz. Our system operates in the strong atom-cavity coupling regime that allows us to explore fundamental quantum optics and implement quantum network protocols.
Optical microcavities confine light spatially and temporally and find application in a wide range of fundamental and applied studies. In many areas, the microcavity figure of merit is not only determined by photon lifetime (or the equivalent quality-factor, Q), but also by simultaneous achievement of small mode volume V . Here we demonstrate ultra-high Q-factor small mode volume toroid microcavities on-a-chip, which exhibit a Q/V factor of more than $10^{6}(lambda/n)^{-3}$. These values are the highest reported to date for any chip-based microcavity. A corresponding Purcell factor in excess of 200 000 and a cavity finesse of $2.8times10^{6}$ is achieved, demonstrating that toroid microcavities are promising candidates for studies of the Purcell effect, cavity QED or biochemical sensing
High refractive index contrast optical microdisk resonators fabricated from silicon-on-insulator wafers are studied using an external silica fiber taper waveguide as a wafer-scale optical probe. Measurements performed in the 1500 nm wavelength band show that these silicon microdisks can support whispering-gallery modes with quality factors as high as 5.2 x 10^5, limited by Rayleigh scattering from fabrication induced surface roughness. Microdisks with radii as small as 2.5 microns are studied, with measured quality factors as high as 4.7 x 10^5 for an optical mode volume of 5.3 cubic wavelengths in the material.
We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor which reflect the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs based microdisks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in microdisks embedding QDs grown on AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band gap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second and third order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.