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Register a new userImportance of second-order piezoelectric effects in zincblende semiconductors
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We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong contributions from second-order effects that have been neglected so far. We calculate the second-order piezoelectric tensors using density functional theory and obtain the piezoelectric field for [111]-oriented In$_x$Ga$_{1-x}$As quantum wells of realistic dimensions and concentration $x$. We find that the linear and the quadratic piezoelectric coefficients have the opposite effect on the field, and for large strains the quadratic terms even dominate. Thus, the piezoelectric field turns out to be a rare example of a physical quantity for which the first- and second-order contributions are of comparable magnitude.
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A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.
The observation of strong magnetoelectric effects is reported in thick film bilayers and multilayers of ferrite-lead titanate zirconate (PZT) and lanthanum nanganite-PZT. The ferrites used in our studies included pure and zinc substituted cobalt-, nickel- and lithium ferrites. Samples were prepared by sintering 10-40 mm thick films obtained by tape-casting. Measurements of ME voltage coefficients at 10-1000 Hz indicated a giant ME effect in nickel ferrite-PZT, but a relatively weak coupling in other ferrite-PZT and manganite-PZT systems. Multilayers prepared by hot pressing was found to show a higher ME coefficient than sintered samples. Evidence was found for enhancement in ME coefficients when Zn was substituted in ferrites. The Zn-assisted increase was attributed to low anisotropy and high permeability that resulted in favorable magneto-mechanical coupling in the composites. We analyzed the data in terms of our recent comprehensive theory that takes into account actual interface conditions by introducing an interface coupling parameter. Theoretical longitudinal and transverse ME voltage coefficients for unclamped and clamped samples are in general agreement with data. From the analysis we inferred excellent interface coupling for nickel zinc ferrite-PZT and weak coupling for other layered systems.
Frequency dependence of magnetoelectric (ME) coupling is investigated in trilayers of ferromagnetic alloy and piezoelectric lead zirconate titanate (PZT). The ferromagnetic phases studied include permendur, a soft magnet with high magnetostriction, iron, nickel, and cobalt. Low frequency data on ME voltage coefficient versus bias magnetic field indicate strong coupling only for trilayers with permendure or Ni. Measurements of frequency dependence of ME voltage reveal a giant ME coupling at electromechanical resonance. The ME interactions for transverse fields is an order of magnitude stronger than for longitudinal fields. The maximum voltage coefficient of 90 V/cm Oe at resonance is measured for samples with nickel or permendure and is three orders of magnitude higher than low-frequency values.
We use a recently developed self-consistent $GW$ approximation to present systematic emph{ab initio} calculations of the conduction band spin splitting in III-V and II-V zincblende semiconductors. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splittings based on a quasiparticle approach; and because the self-consistent $GW$ scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. The results are compared to the few available experimental data and a previous calculation based on a model one-particle potential. We also briefly address the widely used {bf k}$cdot${bf p} parameterization in the context of these results.
A first-principles study of the birefringence and the frequency dependent second harmonic generation (SHG) coefficients of the ternary pnictide semiconductors with formula ABC$_2$ (A = Zn, Cd; B = Si, Ge; C = As, P) with the chalcopyrite structures was carried out. We show that a simple empirical observation that a smaller value of the gap is correlated with larger value of SHG is qualitatively true. However, simple inverse power scaling laws between gaps and SHG were not found. Instead, the real value of the nonlinear response is a result of a very delicate balance between different intraband and interband terms.
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