Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userHump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect
526
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $rho_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $rho_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $rho_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.
rate research
Read More
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) capping layer and ionic liquid gating. STO capping results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell (uc) films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface.
Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall effect (THE), which is generated via spin-orbit interactions between conduction electrons and topological spin textures such as skyrmions. We report a comprehensive set of Hall effect and magnetization measurements on epitaxial films of the prototypical ferromagnetic metal SrRuO$_3$ the magnetic and transport properties of which were systematically modulated by varying the concentration of Ru vacancies. We observe Hall effect anomalies that closely resemble signatures of the THE, but a quantitative analysis demonstrates that they result from inhomogeneities in the ferromagnetic magnetization caused by a non-random distribution of Ru vacancies. As such inhomogeneities are difficult to avoid and are rarely characterized independently, our results call into question the identification of topological spin textures in numerous prior transport studies of quantum materials, heterostructures, and devices. Firm conclusions regarding the presence of such textures must meet stringent conditions such as probes that couple directly to the non-collinear magnetization on the atomic scale.
We study the magneto-optical Kerr effect (MOKE) in SrRuO$_3$ thin films, uncovering wide regimes of wavelength, temperature, and magnetic field where the Kerr rotation is not simply proportional to the magnetization but instead displays two-component behavior. One component of the MOKE signal tracks the average magnetization, while the second anomalous component bears a resemblance to anomalies in the Hall resistivity which have been previously reported in skyrmion materials. We present a theory showing that the MOKE anomalies arise from the non-monotonic relation between the Kerr angle and the magnetization, when we average over magnetic domains which proliferate near the coercive field. Our results suggest that inhomogeneous domain formation, rather than skyrmions, may provide a common origin for the observed MOKE and Hall resistivity anomalies.
We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, we reveal that atomic rumplings at the thin-film surface enhance Dzyaloshinskii-Moriya interaction, which can generate stable chiral spin textures and a hump-like Hall effect. Moreover, temperature dependent resonant X-ray measurements at Ru L-edge under a magnetic field showed that the intensity modulation of unexpected peaks was correlated with the hump region in the Hall effect. We verify that the two-dimensional property of ultrathin films generates stable non-coplanar spin textures having a magnetic order in a ferromagnetic oxide material.
Perovskite SrRuO$_3$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO$_3$ with the spin-orbit semimetal SrIrO$_3$ in combination with band-structure calculations with a Hubbard $U$ term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4d$_{xz}$ bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from out of plane towards in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about $20^circ$ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model is compatible with stable skyrmions only up to a critical angle of roughly $45^circ$ from the sample normal. Within about $20^circ$ from the thin film plane an additional peak-like contribution to the Hall effect suggests the formation of a non-trivial spin structure.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
