No Arabic abstract
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at $T_mathrm{N} sim 15.6$ K and $T_mathrm{CDW} sim 140$ K, respectively. In the AFM state, when the magnetic field is applied along the $c$-axis direction, EuAl$_4$ undergoes a series of metamagnetic transitions. Within this field range, we observe a clear hump-like anomaly in the Hall resistivity, representing part of the anomalous Hall resistivity. By considering different scenarios, we conclude that such a hump-like feature is most likely a manifestation of the topological Hall effect, normally occurring in noncentrosymmetric materials known to host nontrivial topological spin textures. In view of this, EuAl$_4$ would represent a rare case where the topological Hall effect not only arises in a centrosymmetric structure, but it also coexists with CDW order.
The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. $f$-electrons, with their large spin-orbit coupling, abundance of non-collinear magnetic structures and high electronic tunability, are attractive candidates to search for tunable topological properties. In this study, we measure anomalous Hall effect (AHE) in the distorted kagom$acute{e}$ heavy fermion antiferromagnet U$_3$Ru$_4$Al$_{12}$. A large intrinsic AHE in high fields reveals the presence of a large Berry curvature. Moreover, the fields required to obtain the large Berry curvature are significantly different between $B parallel a$ and $B parallel a^*$, providing a mechanism to control the topological response in this system. Theoretical calculations illustrate that this sensitivity may be due to the heavy fermion character of the electronic structure. These results shed light on the Berry curvature of a strongly correlated band structure in magnetically frustrated heavy fermion materials, but also emphasize 5$f$-electrons as an ideal playground for studying field-tuned topological states.
We report on the experimental observation of an anomalous Hall effect (AHE) in highly oriented pyrolytic graphite samples. The overall data indicate that the AHE in graphite can be self-consistently understood within the frameworks of the magnetic-field-driven excitonic pairing models.
The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic metals. Here, we investigate the recently discovered AHE in the chiral antiferromagnet Mn3Sn by measuring a thermal analog of the AHE, known as an anomalous thermal Hall effect (ATHE). The amplitude of the ATHE scales with the anomalous Hall conductivity of Mn3Sn over a wide temperature range, demonstrating that the AHE of Mn3Sn arises from a dissipationless intrinsic mechanism associated with the Berry curvature. Moreover, we find that the dissipationless AHE is significantly stabilized by shifting the Fermi level toward the magnetic Weyl points. Thus, in Mn3Sn, the Berry curvature emerging from the proposed magnetic Weyl fermion state is a key factor for the observed AHE and ATHE.
The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.