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Register a new userHow ripples turn into dots: modeling ion-beam erosion under oblique incidence
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Pattern formation on semiconductor surfaces induced by low energetic ion-beam erosion under normal and oblique incidence is theoretically investigated using a continuum model in form of a stochastic, nonlocal, anisotropic Kuramoto-Sivashinsky equation. Depending on the size of the parameters this model exhibits hexagonally ordered dot, ripple, less regular and even rather smooth patterns. We investigate the transitional behavior between such states and suggest how transitions can be experimentally detected.
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We implement substrate rotation in a 2+1 dimensional solid-on-solid model of ion beam sputtering of solid surfaces. With this extension of the model, we study the effect of concurrent rotation, as the surface is sputtered, on possible topographic regions of surface patterns. In particular we perform a detailed numerical analysis of the time evolution of dots obtained from our Monte Carlo simulations at off-normal-incidence sputter erosion. We found the same power-law scaling exponents of the dot characteristics for two different sets of ion-material combinations, without and with substrate rotation.
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