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Intrinsic ripples with various configurations and sizes were reported to affect the physical and chemical properties of 2D materials. By performing molecular dynamics simulations and theoretical analysis, we use two geometric models of the ripple shape to explore numerically the distribution of ripples in graphene membrane. We focus on the ratio of ripple height to its diameter (t/D) which was recently shown to be the most relevant for chemical activity of graphene membranes. Our result demonstrates that the ripple density decreases as the coefficient t/D increases, in a qualitative agreement with the Boltzmann distribution derived analytically from the bending energy of the membrane. Our theoretical study provides also specific quantitative information on the ripple distribution in graphene and gives new insights applicable to other 2D materials.
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The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 AA which is compatible with experimental findings (50-100 AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.
Thermal ripples of graphene are well understood at room temperature, but their quantum counterparts at low temperatures are still in need of a realistic quantitative description. Here we present atomistic path-integral Monte Carlo simulations of freestanding graphene, which show upon cooling a striking classical-quantum evolution of height and angular fluctuations. The crossover takes place at ever-decreasing temperatures for ever-increasing wavelengths so that a completely quantum regime is never attained. Zero-temperature quantum graphene is flatter and smoother than classical at large scales, yet rougher at short scales. The angular fluctuation distribution of the normals can be quantitatively described by coexistence of two Gaussians, one classical strongly T-dependent and one quantum about $2^{circ}$ wide, of zero-point character. The quantum evolution of ripple-induced height and angular spread should be observable in electron diffraction in graphene and other two-dimensional materials like MoS$_2$, bilayer graphene, boron nitride, etc.
Pattern formation on semiconductor surfaces induced by low energetic ion-beam erosion under normal and oblique incidence is theoretically investigated using a continuum model in form of a stochastic, nonlocal, anisotropic Kuramoto-Sivashinsky equation. Depending on the size of the parameters this model exhibits hexagonally ordered dot, ripple, less regular and even rather smooth patterns. We investigate the transitional behavior between such states and suggest how transitions can be experimentally detected.
Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques.
Electronic and transport properties of Graphene, a one-atom thick crystalline material, are sensitive to the presence of atoms adsorbed on its surface. An ensemble of randomly positioned adatoms, each serving as a scattering center, leads to the Bolzmann-Drude diffusion of charge determining the resistivity of the material. An important question, however, is whether the distribution of adatoms is always genuinely random. In this Article we demonstrate that a dilute adatoms on graphene may have a tendency towards a spatially correlated state with a hidden Kekule mosaic order. This effect emerges from the interaction between the adatoms mediated by the Friedel oscillations of the electron density in graphene. The onset of the ordered state, as the system is cooled below the critical temperature, is accompanied by the opening of a gap in the electronic spectrum of the material, dramatically changing its transport properties.
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