No Arabic abstract
A multi-band effective-mass Hamiltonian is derived for lattice-matched semiconductor nanostructures in a slowly varying external magnetic field. The theory is derived from the first-principles magnetic-field coupling Hamiltonian of Pickard and Mauri, which is applicable to nonlocal norm-conserving pseudopotentials in the local density approximation to density functional theory. The pseudopotential of the nanostructure is treated as a perturbation of a bulk reference crystal, with linear and quadratic response terms included in k.p perturbation theory. The resulting Hamiltonian contains several interface terms that have not been included in previous work on nanostructures in a magnetic field. The derivation provides the first direct analytical expressions showing how the coupling of the nonlocal potential to the magnetic field influences the effective magnetic dipole moment of the electron.
In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent heterostructures with macroscopically neutral interfaces and no spontaneous bulk polarization. The key assumption -- proved in earlier numerical studies -- is that the heterostructure can be treated as a weak perturbation with respect to some periodic reference crystal, with the nonlinear response small in comparison to the linear response. Quadratic response theory is then used in conjunction with k.p perturbation theory to develop a multi-band effective-mass Hamiltonian (for slowly varying envelope functions) in which all interface band-mixing effects are determined by the linear response. To within terms of the same order as the position dependence of the effective mass, the quadratic response contributes only a bulk band offset term and an interface dipole term, both of which are diagonal in the effective-mass Hamiltonian. Long-range multipole Coulomb fields arise in quantum wires or dots, but have no qualitative effect in two-dimensional systems beyond a dipole contribution to the band offsets.
We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the induced nuclear spin polarization and dipolar magnetic fields. In GaAs/AlGaAs parabolic quantum wells the nuclear spin polarization can be as high as 80% and the induced nuclear magnetic fields can approach a few gauss with an associated nuclear resonance shift of the order of kHz when the electronic system is 100% spin polarized. These fields and shifts can be tuned using small electric fields. We discuss the implications of such control for optical nuclear magnetic resonance experiments in low-dimensional semiconductor nanostructures.
Using first-principles density-functional theory calculations, we obtain the non-coplanar nodal loop for a single-component molecular conductor [Pd(dddt)$_2$] consisting of HOMO and LUMO with different parity. Focusing on two typical Dirac points, we present a model of an effective 2 $times$ 2 matrix Hamiltonian in terms of two kinds of velocities associated with the nodal line. The base of the model is taken as HOMO and LUMO on each Dirac point, where two band energies degenerate and the off diagonal matrix element vanishes. The present model, which reasonably describes the Dirac cone in accordance with the first-principles calculation, provides a new method of analyzing electronic states of a topological nodal line semimetal.
First-principles calculations, in combination with the four-state energy mapping method, are performed to extract the magnetic interaction parameters of multiferroic BiFeO$_3$. Such parameters include the symmetric exchange (SE) couplings and the Dzyaloshinskii-Moriya (DM) interactions up to second nearest neighbors, as well as the single ion anisotropy (SIA). All magnetic parameters are obtained not only for the $R3c$ structural ground state, but also for the $R3m$ and $Rbar{3}c$ phases in order to determine the effects of ferroelectricity and antiferrodistortion distortions, respectively, on these magnetic parameters. In particular, two different second-nearest neighbor couplings are identified and their origins are discussed in details. Moreover, Monte-Carlo (MC) simulations using a magnetic Hamiltonian incorporating these first-principles-derived interaction parameters are further performed. They result (i) not only in the accurate prediction of the spin-canted G-type antiferromagnetic structure and of the known magnetic cycloid propagating along a $<$1$bar{1}$0$>$ direction, as well as their unusual characteristics (such as a weak magnetization and spin-density-waves, respectively); (ii) but also in the finding of another cycloidal state of low-energy and that awaits to be experimentally confirmed. Turning on and off the different magnetic interaction parameters in the MC simulations also reveal the precise role of each of them on magnetism.
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidating the mechanism for the ferromagnetism and exploring high-performance Cr-doped AlN diluted magnetic semiconductors.