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Register a new userEffective Hamiltonian of Topological Nodal Line Semimetal in Single-Component Molecular Conductor [Pd(dddt)$_2$] from First-Principles
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Using first-principles density-functional theory calculations, we obtain the non-coplanar nodal loop for a single-component molecular conductor [Pd(dddt)$_2$] consisting of HOMO and LUMO with different parity. Focusing on two typical Dirac points, we present a model of an effective 2 $times$ 2 matrix Hamiltonian in terms of two kinds of velocities associated with the nodal line. The base of the model is taken as HOMO and LUMO on each Dirac point, where two band energies degenerate and the off diagonal matrix element vanishes. The present model, which reasonably describes the Dirac cone in accordance with the first-principles calculation, provides a new method of analyzing electronic states of a topological nodal line semimetal.
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We examine an effect of acoustic phonon scattering on an electric conductivity of single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band by applying the previous calculation in a two-dimensional model with Dirac cone [Phys. Rev. B {bf 98},161205 (2018)], where the electric transport by the impurity scattering exhibits the noticeable interplay of the Dirac cone and the phonon scattering,resulting in a maximum of the conductivity with increasing temperature. The conductor shows a nodal line semimetal where the band crossing of HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital) provides a loop of Dirac points located close to the Fermi energy followed by the density of states (DOS) similar to that of two-dimensional Dirac cone. Using a tight-binding (TB) model [arXiv:2008.09277], which was obtained using the crystal structure observed from a recent X ray diffraction experiment under pressure, it is shown that the obtained conductivity explains reasonably the anomalous behavior in [Pd(dddt)$_2$] exhibiting almost temperature independent resistivity at finite temperatures. This paper demonstrates a crucial role of the acoustic phonon scattering at finite temperatures in the electric conductivity of Dirac electrons. The present theoretical results of conductivity are compared with those of experiments.
We examined high-pressure electronic structure of a single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) at room temperature, based on the crystal structure determined by single crystal synchrotron X-ray diffraction measurements at 5.9 GPa. The monoclinic unit cell contains four molecules that form two crystallographically independent molecular layers. A tight-binding model of 8 $times$ 8 matrix Hamiltonian gives an electronic structure as a Dirac electron system. The Dirac point describes a loop within the first Brillouin zone, and a nodal line semimetal is obtained. The noticeable property of the Dirac cone with a linear dispersion is shown by calculating density of states (DOS). The Dirac cone in this system is associated with the crossing of HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) bands, which originates from the direct interaction between different molecular layers. This is a newly found mechanism in addition to the indirect one [J. Phys. Soc. Jpn., {bf 86}, 064705 (2017)]. The Dirac points emerge as a line, when the HOMO and LUMO bands meet on the surface and the HOMO-LUMO couplings are absent. Such a mechanism is verified using a reduced model of 4 $times$ 4 matrix Hamiltonian. The deviation of the band energy ($delta E$) at the Dirac point from the Fermi level is very small ($delta E < $ 0.4meV). The nodal line is examined by calculating the parity of the occupied band eigen states at TRIM (Time Reversal Invariant Momentum) showing that the topological number is 1.
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmanns semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.
The optical properties of YbMnSb2 have been measured in a broad frequency range from room temperature down to 7 K. With decreasing temperature, a flat region develops in the optical conductivity spectra at about 300cm-1, which can not be described by the well-known Drude-Lorentz model. A frequency-independent component has to be introduced to model the measured optical conductivity. Our first-principles calculations show that YbMnSb2 possesses a Dirac nodal line near the Fermi level. A comparison between the measured optical properties and calculated electronic band structures suggests that the frequency-independent optical conductivity component arises from interband transitions near the Dirac nodal line, thus demonstrating that YbMnSb2 is a Dirac nodal line semimetal.
Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material, CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the $Gamma$ point in the absence of spin-orbit coupling (SOC) effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility ($mu approx 3.44times 10^4$ cm$^2$V$^{-1}$s$^{-1}$) and displays a field-induced metal-semiconductor like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear non-saturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures ($approx 7.44times 10^3 %$ and $approx 1.71times 10^3%$, respectively, at 4K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.
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