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Register a new userAnisotropy Dependence of Irreversible Switching in Fe/SmCo and FeNi/FePt Exchange Spring Magnet Films
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Magnetization reversal in exchange-spring magnet films has been investigated by a First Order Reversal Curve (FORC) technique and vector magnetometry. In Fe/epitaxial-SmCo films, the reversal proceeds by a reversible rotation of the Fe soft layer, followed by an irreversible switching of the SmCo hard layer. The switching fields are clearly manifested by separate steps in both longitudinal and transverse hysteresis loops, as well as sharp boundaries in the FORC distribution. In FeNi/polycrystalline-FePt films, particularly with thin FeNi, the switching fields are masked by the smooth and step-free major loop. However, the FORC diagram still displays a distinct onset of irreversible switching and transverse hysteresis loops exhibit a pair of peaks, whose amplitude is larger than the maximum possible contribution from the FeNi layer alone. This suggests that the FeNi and FePt layers reverse in a continuous process via a vertical spiral. The successive vs. continuous rotation of the soft/hard layer system is primarily due to the different crystal structure of the hard layer, which results in different anisotropies.
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Understanding the damping mechanism in finite size systems and its dependence on temperature is a critical step in the development of magnetic nanotechnologies. In this work, nano-sized materials are modeled via atomistic spin dynamics, the damping parameter being extracted from Ferromagnetic Resonance (FMR) simulations applied for FePt systems, generally used for heat-assisted magnetic recording media (HAMR). We find that the damping increases rapidly close to Tc and the effect is enhanced with decreasing system size, which is ascribed to scattering at the grain boundaries. Additionally, FMR methods provide the temperature dependence of both damping and the anisotropy, important for the development of HAMR. Semi-analytical calculations show that, in the presence of a grain size distribution, the FMR linewidth can decrease close to the Curie temperature due to a loss of inhomogeneous line broadening. Although FePt has been used in this study, the results presented in the current work are general and valid for any ferromagnetic material.
The strong perpendicular magnetic anisotropy of $L{rm1_0}$-ordered FePt has been the subject of extensive studies for a long time. However, it is not known which element, Fe or Pt, mainly contributes to the magnetic anisotropy energy (MAE). We have investigated the anisotropy of the orbital magnetic moments of Fe 3$d$ and Pt 5$d$ electrons in $L{rm1_0}$-ordered FePt thin films by Fe and Pt $L_{2,3}$-edge x-ray magnetic circular dichroism (XMCD) measurements for samples with various degrees of long-range chemical order $S$. Fe $L_{2,3}$-edge XMCD showed that the orbital magnetic moment was larger when the magnetic field was applied perpendicular to the film than parallel to it, and that the anisotropy of the orbital magnetic moment increased with $S$. Pt $L_{2,3}$-edge XMCD also showed that the orbital magnetic moment was smaller when the magnetic field was applied perpendicular to the film than parallel to it, opposite to the Fe $L_{2,3}$-edge XMCD results although the anisotropy of the orbital magnetic moment increases with $S$ like the Fe edge. These results are qualitatively consistent with the first-principles calculation by Solovyev ${it et al.}$ [Phys. Rev. B $bf{52}$, 13419 (1995).], which also predicts the dominant contributions of Pt 5$d$ to the magnetic anisotropy energy rather than Fe 3$d$ due to the strong spin-orbit coupling and the small spin splitting of the Pt 5$d$ bands in $L{rm1_0}$-ordered FePt.
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.
The depth profile of the intrinsic magnetic properties in an Fe/Sm-Co bilayer fabricated under nearly optimal spring-magnet conditions was determined by complementary studies of polarized neutron reflectometry and micromagnetic simulations. We found that at the Fe/Sm-Co interface the magnetic properties change gradually at the length scale of 8 nm. In this intermixed interfacial region, the saturation magnetization and magnetic anisotropy are lower and the exchange stiffness is higher than values estimated from the model based on a mixture of Fe and Sm-Co phases. Therefore, the intermixed interface yields superior exchange coupling between the Fe and Sm-Co layers, but at the cost of average magnetization.
Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.
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