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A Prototype Si/CdTe Compton Camera and the Polarization Measurement

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 Added by Takefumi Mitani
 Publication date 2004
  fields Physics
and research's language is English




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A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor detectors such as silicon, germanium and cadmium telluride(CdTe) have several advantages over scintillation detectors, which have been used so far. Based on the recent advances of high resolution CdTe and silicon imaging detectors, we are working on a Si/CdTe Compton camera. We have developed 64-pixel CdTe detectors with a pixel size of 2mmx2mm and double-sided Si strip detectors(DSSDs) with a position resolution of 800 micron. As a prototype Si/CdTe Compton camera, we use a DSSD as a scatterer and two CdTe pixel detectors as an absorber. In order to verify its performance, we irradiate the camera with 100% linearly polarised 170keV gamma-rays and demonstrate the system works properly as a Compton camera. The resolution of the reconstructed scattering angle is 22 degrees(FWHM). Measurement of polarization is also reported. The polarimetric modulation factor is obtained to be 43%, which is consistent with the prediction of Monte Carlo simulations.



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Tomographic imaging with radionuclides commonly used in nuclear medicine, such as $^{111}$In (171 and 245 keV) and $^{131}$I (364 keV), is in high demand for medical applications and small animal imaging. The Si/CdTe Compton camera with its high angular and high energy resolutions is an especially promising detector to extend the energy coverage for imaging to the range that covers gamma-ray emitted from these radionuclides. Here, we take the first steps towards short-distance imaging by conducting experiments using three-dimensional phantoms composed of multiple sphere-like solutions of $^{111}$In and $^{131}$I with a diameter of 2.7 mm, placed at a distance of 41 mm. Using simple back-projection methods, the positions of the sources are reproduced with a spatial resolution of 11.5 mm and 9.0 mm (FWHM) for $^{111}$In and $^{131}$I, respectively. We found that a LM-MLEM method gives a better resolution of 4.0 mm and 2.7 mm (FWHM). We resolve source positions of a tetrahedron structure with a source-to-source separation of 28 mm. These findings demonstrate that Compton Cameras have the potential of close-distance imaging of radioisotopes distributions in the energy range below 400 keV.
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We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7 degrees at 122 keV and 356 keV, respectively.
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