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Register a new userTuning nonlinear second-harmonic generation in AlGaAs nanoantennas via chalcogenide phase change material
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The ability to engineer nonlinear optical processes in all-dielectric nanostructures is both of fundamental interest and highly desirable for high-performance, robust, and miniaturized nonlinear optical devices. Herein, we propose a novel paradigm for the efficient tuning of second-harmonic generation (SHG) process in dielectric nanoantennas by integrating with chalcogenide phase change material. In a design with Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) film sandwiched between the AlGaAs nanoantennas and AlO$_{x}$ substrate, the nonlinear SHG signal from the AlGaAs nanoantennas can be boosted via the resonantly localized field induced by the optically-induced Mie-type resonances, and further modulated by exploiting the GST amorphous-to-crystalline phase change in a non-volatile, multi-level manner. The tuning strategy originates from the modulation of resonant conditions by changes in the refractive index of GST. With a thorough examination of tuning performances for different nanoantenna radii, a maximum modulation depth as high as 540$%$ is numerically demonstrated. This work not only reveals out the potential of GST in optical nonlinearity control, but also provides promising strategy in smart designing tunable and reconfigurable nonlinear optical devices, e.g., light emitters, modulators, and sensors.
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We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from an AlGaAs nanocylinder of height h=400 nm and varying radius pumped with femtosecond pulses delivered at 1554-nm wavelength has been measured, revealing a peak conversion efficiency exceeding 10-5 for nanocylinders with an otpimized geometry.
Dielectric metasurfaces have shown prominent applications in nonlinear optics due to strong field enhancement and low dissipation losses at the nanoscale. Chalcogenide glasses are one of the promising materials for the observation of nonlinear effects due to their high intrinsic nonlinearities. Here, we demonstrate, experimentally and theoretically, that significant second harmonic generation can be obtained within amorphous chalcogenide based metasurfaces by relying on the coupling between lattice and particle resonances. We further show that the high quality factor resonance at the origin of the second harmonic generation can be tuned over a wide wavelength range using a simple and versatile fabrication approach. The measured second harmonic intensity is orders of magnitude higher than that from a deposited chalcogenide film, and more than three orders of magnitude higher than conventional plasmonic and Silicon-based structures. Fabricated via a simple and scalable technique, these all-dielectric architectures are ideal candidates for the design of flat non-linear optical components on flexible substrates.
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V
We report second harmonic generation from a titanium indiffused lithium niobate waveguide resonator device whose cavity length is locked to the fundamental pump laser using an on-chip phase modulator. The device remains locked for more than 5 minutes, producing more than 80% of the initial second harmonic power. The stability of the system is seen to be limited by DC-drift, a known effect in many lithium niobate systems that include deposited electrodes. The presented device explores the suitability of waveguide resonators in this platform for use in larger integrated networks.
We describe an approach based on topology optimization that enables automatic discovery of wavelength-scale photonic structures for achieving high-efficiency second-harmonic generation (SHG). A key distinction from previous formulation and designs that seek to maximize Purcell factors at individual frequencies is that our method not only aims to achieve frequency matching (across an entire octave) and large radiative lifetimes, but also optimizes the equally important nonlinear--coupling figure of merit $bar{beta}$, involving a complicated spatial overlap-integral between modes. We apply this method to the particular problem of optimizing micropost and grating-slab cavities (one-dimensional multilayered structures) and demonstrate that a variety of material platforms can support modes with the requisite frequencies, large lifetimes $Q > 10^4$, small modal volumes $sim (lambda/n)^3$, and extremely large $bar{beta} gtrsim 10^{-2}$, leading to orders of magnitude enhancements in SHG efficiency compared to state of the art photonic designs. Such giant $bar{beta}$ alleviate the need for ultra-narrow linewidths and thus pave the way for wavelength-scale SHG devices with faster operating timescales and higher tolerance to fabrication imperfections.
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