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Register a new userAnisotropic Nodal-Line-Derived Large Anomalous Hall Conductivity in ZrMnP and HfMnP
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The nontrivial band structure of semimetals has attracted substantial research attention in condensed matter physics and materials science in recent years owing to its intriguing physical properties. Within this class, a group of non-trivial materials known as nodal-line semimetals is particularly important. Nodal-line semimetals exhibit the potential effects of electronic correlation in nonmagnetic materials, whereas they enhance the contribution of the Berry curvature in magnetic materials, resulting in high anomalous Hall conductivity (AHC). In this study, two ferromagnetic compounds, namely ZrMnP and HfMnP, are selected, wherein the abundance of mirror planes in the crystal structure ensures gapped nodal lines at the Fermi energy. These nodal lines result in one of the largest AHC values of 2840 ohm^-1cm^-1, with a high anomalous Hall angle of 13.6 % in these compounds. First-principles calculations provide a clear and detailed understanding of nodal line-enhanced AHC. Our finding suggests a guideline for searching large AHC compounds.
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ZrMnP and HfMnP single crystals are grown by a self-flux growth technique and structural as well as temperature dependent magnetic and transport properties are studied. Both compounds have an orthorhombic crystal structure. ZrMnP and HfMnP are ferromagnetic with Curie temperatures around $370$~K and $320$~K respectively. The spontaneous magnetizations of ZrMnP and HfMnP are determined to be $1.9$~$mu_textrm{B}$/f.u. and $2.1$~$mu_textrm{B}$/f.u. respectively at $50$~K. The magnetocaloric effect of ZrMnP in term of entropy change ($Delta S$) is estimated to be $-6.7$ kJm$^{-3}$K$^{-1}$ around $369$~K. The easy axis of magnetization is [100] for both compounds, with a small anisotropy relative to the [010] axis. At $50$~K, the anisotropy field along the [001] axis is $sim4.6$~T for ZrMnP and $sim10$~T for HfMnP. Such large magnetic anisotropy is remarkable considering the absence of rare-earth elements in these compounds. The first principle calculation correctly predicts the magnetization and hard axis orientation for both compounds, and predicts the experimental HfMnP anisotropy field within 25 percent. More importantly, our calculations suggest that the large magnetic anisotropy comes primarily from the Mn atoms suggesting that similarly large anisotropies may be found in other 3d transition metal compounds.
The topological properties and intrinsic anomalous Hall effect of CsCl-type ferromagnets GdZn and GdCd have been studied based on first-principles electronic structure calculations. According to the calculated band structures, both GdZn and GdCd host nodal lines near the Fermi level. Once the magnetization breaks the mirror symmetries, the nodal lines are gapped. This can create a huge Berry curvature. A large anomalous Hall effect is then generated when the Fermi level resides within the opened gaps of the nodal lines. Our works indicate that GdZn and GdCd can provide a promising platform for exploring the interplay between topological property and magnetism.
The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE. Whereas, in most collinear antiferromagnets (AFMs), the integration of Berry curvatures on Brillouin zone is forced to zero by the joint $TO$ symmetry, where $T$ and $O$ are time reversal and a space group operation, respectively. Even with inverted band structures, such kind of AFM cannot have AHE. Therefore, so far, AFM nodal line band structures constructed by spin degenerated bands didnt get much attentions in AHE materials. In this work, we illustrate that such kind of band structure indeed provides a promising starting point to generated strong local Berry curvature by perturbations and, therefore, strong intrinsic AHE. In specific AFM compounds of $A$MnBi$_2$($A$=Ca and Yb) with inverted band structure, we found a strong AHE induced by a weak spin canting, and due to nodal line in the band structure the anomalous Hall conductivity keeps growing as the canting angle increases. Since such spin-canting can be adjusted via doping experimentally, it provides another effective strategy to generate and manipulate strong AHE
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $sigma_{xy}^{rm AHE}$ and the longitudinal conductivity $sigma_{xx}$ over several orders of magnitude, a universal scaling relation $sigma_{xy}^{rm AHE} propto sigma_{xx}^{alpha}$ with $alpha = 1.69 pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmanns semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.
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