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Register a new userLarge anomalous Hall effect induced by gapped nodal lines in GdZn and GdCd
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The topological properties and intrinsic anomalous Hall effect of CsCl-type ferromagnets GdZn and GdCd have been studied based on first-principles electronic structure calculations. According to the calculated band structures, both GdZn and GdCd host nodal lines near the Fermi level. Once the magnetization breaks the mirror symmetries, the nodal lines are gapped. This can create a huge Berry curvature. A large anomalous Hall effect is then generated when the Fermi level resides within the opened gaps of the nodal lines. Our works indicate that GdZn and GdCd can provide a promising platform for exploring the interplay between topological property and magnetism.
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Kagome magnets are believed to have numerous exotic physical properties due to the possible interplay between lattice geometry, electron correlation and band topology. Here, we report the large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$, which has a Curie temperature of 382 K and easy plane along with the kagome lattice. At low temperatures, unsaturated positive magnetoresistance and opposite signs of ordinary Hall coefficient for $rho_{xz}$ and $rho_{yx}$ indicate the coexistence of electrons and holes in the system. A large intrinsic anomalous Hall conductivity of 380 $Omega^{-1}$ cm$^{-1}$, or 0.44 $e^2/h$ per Mn layer, is observed in $sigma_{xy}^A$. This value is significantly larger than those in other $R$Mn$_6$Sn$_6$ ($R$ = rare earth elements) kagome compounds. Band structure calculations show several band crossings, including a spin-polarized Dirac point at the K point, close to the Fermi energy. The calculated intrinsic Hall conductivity agrees well with the experimental value, and shows a maximum peak near the Fermi energy. We attribute the large anomalous Hall effect in LiMn$_6$Sn$_6$ to the band crossings closely located near the Fermi energy.
The modulation of the electronic structure by an external magnetic field, which could further control the electronic transport behaviour of a system, is highly desired. Herein, an unconventional anomalous Hall effect (UAHE) was observed during magnetization process in the magnetic Weyl semimetal EuB6, resulting in an unconventional anomalous Hall-conductivity as high as ~1000 {Omega}-1 cm-1 and a Hall-angle up to ~10%. The system even only shows the UAHE, meaning that the anomalous Hall signal completely comes from the UAHE, with UAHE accounting for 100% and 87.5% of the AHE and the total Hall response, respectively. Theoretical calculations revealed that a largely enhanced Berry curvature was induced by the dynamic folding of the topological bands due to the spin-canting effect under external magnetic fields, which further produced the prominent UAHE even in a low-field magnetization process. These findings elucidate the connection between the non-collinear magnetism and the topological electronic state as well as reveal a novel manner to manipulate the transport behaviour of topological electrons.
The nontrivial band structure of semimetals has attracted substantial research attention in condensed matter physics and materials science in recent years owing to its intriguing physical properties. Within this class, a group of non-trivial materials known as nodal-line semimetals is particularly important. Nodal-line semimetals exhibit the potential effects of electronic correlation in nonmagnetic materials, whereas they enhance the contribution of the Berry curvature in magnetic materials, resulting in high anomalous Hall conductivity (AHC). In this study, two ferromagnetic compounds, namely ZrMnP and HfMnP, are selected, wherein the abundance of mirror planes in the crystal structure ensures gapped nodal lines at the Fermi energy. These nodal lines result in one of the largest AHC values of 2840 ohm^-1cm^-1, with a high anomalous Hall angle of 13.6 % in these compounds. First-principles calculations provide a clear and detailed understanding of nodal line-enhanced AHC. Our finding suggests a guideline for searching large AHC compounds.
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $sigma_{xy}^{rm AHE}$ and the longitudinal conductivity $sigma_{xx}$ over several orders of magnitude, a universal scaling relation $sigma_{xy}^{rm AHE} propto sigma_{xx}^{alpha}$ with $alpha = 1.69 pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
We report a comprehensive investigation of the structural, magnetic, transport and thermodynamic properties of a single crystal PrAlSi, in comparison to its nonmagnetic analogue LaAlSi. PrAlSi exhibits a ferromagnetic transition at $T_C$ = 17.8 K which, however, is followed by two weak phase transitions at lower temperatures. Based on the combined dc and ac magnetic susceptibility measurements, we propose the two reentrant magnetic phases below $T_C$ to be spin glasses or ferromagnetic cluster glasses. When the magnetic glassy states are suppressed by small field, several remarkable features appear. These include a linear, nonsaturating magnetoresistance as a function of field that is reminiscent of a topological or charge-compensated semimetal, and a large anomalous Hall conductivity amounting to $sim$2000 $Omega ^{-1}$cm$^{-1}$. Specific-heat measurements indicate a non-Kramers doublet ground state and a relatively low crystal electric field splitting of the Pr$^{3+}$ multiplets of less than 100 K. Shubnikov-de Hass oscillations are absent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi, with an unusual temperature dependence of the dominating oscillation frequency $F$. It increases from $F$ = 18 T at 25 K to $F$ = 33 T at 2 K, hinting at an emerging Fermi pocket upon cooling into the ordered phase. These results suggest that PrAlSi is a new system where a small Fermi pocket of likely relativistic fermions is strongly coupled to magnetism. Whether hybridization between $f$ and conduction band is also involved remains an intriguing open problem.
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