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Register a new userEpitaxial Integration of a Perpendicularly Magnetized Ferrimagnetic Metal on a Ferroelectric oxide for Electric-Field Control
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Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric PMN-PT single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.
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Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule heating, especially when the devices are scaled to the nanoscale. In the review, we summarize recent results on the giant magnetization and resistivity modulation in a metamagnetic intermetallic alloy - FeRh, which is achieved by electric-field-controlled magnetic phase transitions in multiferroic heterostructures. Furthermore, the approach is extended to topological antiferromagnetic spintronics, which is currently receiving attention in the magnetic society, and the antiferromagnetic order parameter has been able to switch back and forth by a small electric field. In the end, we envision the possibility of manipulating exotic physical phenomena in the emerging topological antiferromagnetic spintronics field via the electric-field approach.
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO$_3$ substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. Magnetic fields do not affect the velocity of magnetic domain walls, but independently tailor their internal spin structure, causing a change in domain wall dynamics at high velocities.
A perpendicularly magnetized ferromagnetic layer is an important building block for recent/future highdensity spintronic memory applications. This paper reports on the fabrication of perpendicularly magnetized Ni / Pt superlattices and the characterization of their structures and magnetic properties. The optimization of film growth conditions allowed us to grow epitaxial Ni / Pt (001) superlattices on SrTiO$_{3}$ (001) single crystal substrates. We investigated their structural parameters and magnetic properties as a function of the Ni layer thickness, and obtained a high uniaxial magnetic anisotropy energy of 1.9 x 10$^{6}$ erg/cm$^{3}$ for a [Ni (4.0 nm) / Pt (1.0 nm)] superlattice. In order to elucidate the detailed mechanism on perpendicular magnetic anisotropy for the Ni / Pt (001) superlattices, the experimental results were compared with the first-principles calculations. It has been found that the strain effect is a prime source of the emergence of perpendicular magnetic anisotropy.
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
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