No Arabic abstract
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO$_3$ substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. Magnetic fields do not affect the velocity of magnetic domain walls, but independently tailor their internal spin structure, causing a change in domain wall dynamics at high velocities.
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field driven magnetic domain wall motion is demonstrated for epitaxial Fe films on BaTiO$_3$ with in-plane and out-of-plane polarized domains. In this system, magnetic domain wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric field strength.
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe. Reversible and irreversible micromagnetic structure transformation is demonstrated. These effects are promising for applications in spintronics and magnetic memory.
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic fields or electric currents, MDW motion arises here as a result of strong pinning of MDWs onto ferroelectric domain walls (FDWs) via local strain coupling. By performing extensive micromagnetic simulations, we find several dynamical regimes, including instabilities such as spin wave emission and complex transformations of the MDW structure. In all cases, the time-averaged MDW velocity equals that of the FDW, indicating the absence of Walker breakdown.
We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be smaller than the Walker field, thereby allowing for the observation of the steady and precessional flow regimes. The domain wall width and damping parameters are determined self-consistently. The damping, 30 times larger than the one deduced from ferromagnetic resonance, is shown to essentially originate from the non-conservation of the magnetization modulus. An unpredicted damping resonance and a dissipation regime associated with the existence of horizontal Bloch lines are also revealed.
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices controlled by current instead of magnetic field. However, the nature of the current-driven DW motion--considered qualitatively different from magnetic-field-driven DW motion--remains yet unclear mainly due to the painfully high operation current densities J_OP, which introduce uncontrollable experimental artefacts with serious Joule heating. It is also crucial to reduce J_OP for practical device operation. By use of metallic Pt/Co/Pt nanowires with perpendicular magnetic anisotropy, here we demonstrate DW motion at current densities down to the range of 10^9 A/m^2--two orders smaller than existing reports. Surprisingly the current-driven motion exhibits a scaling behaviour identical to the field-driven motion and thus, belongs to the same universality class despite their qualitative differences. Moreover all DW motions driven by either current or field (or by both) collapse onto a single curve, signalling the unification of the two driving mechanisms. The unified law manifests non-vanishing current efficiency at low current densities down to the practical level, applicable to emerging magnetic nanodevices.