Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectric-Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics
205
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule heating, especially when the devices are scaled to the nanoscale. In the review, we summarize recent results on the giant magnetization and resistivity modulation in a metamagnetic intermetallic alloy - FeRh, which is achieved by electric-field-controlled magnetic phase transitions in multiferroic heterostructures. Furthermore, the approach is extended to topological antiferromagnetic spintronics, which is currently receiving attention in the magnetic society, and the antiferromagnetic order parameter has been able to switch back and forth by a small electric field. In the end, we envision the possibility of manipulating exotic physical phenomena in the emerging topological antiferromagnetic spintronics field via the electric-field approach.
rate research
Read More
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or Neel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures, which suppresses Joule heating caused by switching currents and may enable low energy-consuming electronic devices. Here, we combine the two material classes to explore changes of the resistance of the high-Neel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field, which are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunneling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory which is fully operational in strong magnetic fields and has potential for low-energy and high-density memory applications.
Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric PMN-PT single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.
The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized in-plane due to shape anisotropy, but the magnetocrystalline anisotropy is negligible and there is no preferred in-plane magnetization direction. When heating through the AFM to FM phase transition the nucleation of the FM phase occurs at many independent nucleation sites with random domain orientation. The domains subsequently align to form the final FM domain structure. We observe no pinning of the FM domain structure.
We propose a universal practical approach to realize magnetic second-order topological insulator (SOTI) materials, based on properly breaking the time reversal symmetry in conventional (first-order) topological insulators. The approach works for both three dimensions (3D) and two dimensions (2D), and is particularly suitable for 2D, where it can be achieved by coupling a quantum spin Hall insulator with a magnetic substrate. Using first-principles calculations, we predict bismuthene on EuO(111) surface as the first realistic system for a 2D magnetic SOTI. We explicitly demonstrate the existence of the protected corner states. Benefited from the large spin-orbit coupling and sizable magnetic proximity effect, these corner states are located in a boundary gap $sim 83$ meV, hence can be readily probed in experiment. By controlling the magnetic phase transition, a topological phase transition between a first-order TI and a SOTI can be simultaneously achieved in the system. The effect of symmetry breaking, the connection with filling anomaly, and the experimental detection are discussed.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
