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Register a new userBuilding programable integrated circuits through disordered Chern insulators
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We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate voltage fluctuation and disorder strength. Furthermore, seven basic logic gates distinct from the conventional structures are proposed. Our proposal has potential applications in low power integrated circuits and enlightens the building of integrated circuits in topological materials.
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In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Experimentally, such chiral interface states can be realized by imposing transverse electric field, in which the energy window for quantized transport is much broader than the intrinsic band gap of the corresponding CI. These phenomena are quite universal for disordered CIs due to the direct phase transition between the CI and the normal insulator.
Even though no local order parameter in the sense of the Landau theory exists for topological quantum phase transitions in Chern insulators, the highly non-local Berry curvature exhibits critical behavior near a quantum critical point. We investigate the critical properties of its real space analog, the local Chern marker, in weakly disordered Chern insulators. Due to disorder, inhomogeneities appear in the spatial distribution of the local Chern marker. Their size exhibits power-law scaling with the critical exponent matching the one extracted from the Berry curvature of a clean system. We drive the system slowly through such a quantum phase transition. The characteristic size of inhomogeneities in the non-equilibrium post-quench state obeys the Kibble-Zurek scaling. In this setting, the local Chern marker thus does behave in a similar way as a local order parameter for a symmetry breaking second order phase transition. The Kibble-Zurek scaling also holds for the inhomogeneities in the spatial distribution of excitations and of the orbital polarization.
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring sufficiently large ensemble sizes using variable resonator detunings.
Chern insulator or quantum anomalous Hall state is a topological state with integer Hall conductivity but in absence of Landau level. It had been well established on various two-dimensional lattices with periodic structure. Here, we report similar Chern insulators can also be realized on the quasicrystal with $5$-fold rotational symmetry. Providing the staggered flux through plaquettes, we propose two types of quasicrystalline Chern insulators. Their topological characterizations are well identified by the robustness of edge states, non-zero real-space Chern number, and quantized conductance. We further find the failure of integer conductivity but with quantized Chern number at some special energies. Our study therefore provide a new opportunity to searching topological materials in aperiodic system.
We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond conductivity, we find a collapse of the Mott gap toward a V-shape pseudogapped density of states that occurs concomitantly with the decrease of magnetism around the highly disordered sites but an increase of bond conductivity. These metallic regions percolate to form an emergent non-Fermi liquid phase with a conductivity that increases with temperature. Bond conductivity measured via local microwave impedance combined with charge and spin local spectroscopies are ideal tools to corroborate our predictions.
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