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Chern insulator or quantum anomalous Hall state is a topological state with integer Hall conductivity but in absence of Landau level. It had been well established on various two-dimensional lattices with periodic structure. Here, we report similar Chern insulators can also be realized on the quasicrystal with $5$-fold rotational symmetry. Providing the staggered flux through plaquettes, we propose two types of quasicrystalline Chern insulators. Their topological characterizations are well identified by the robustness of edge states, non-zero real-space Chern number, and quantized conductance. We further find the failure of integer conductivity but with quantized Chern number at some special energies. Our study therefore provide a new opportunity to searching topological materials in aperiodic system.
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Controlling light propagation using artificial photonic crystals and electromagnetic metamaterials is an important topic in the vibrant field of photonics. Notably, chiral edge states on the surface or at the interface of photonic Chern insulators can be used to make reflection-free waveguides. Here, by both theoretical analysis and electromagnetic simulations, we demonstrate that gyromagnetic hyperbolic metamaterials (GHM) are photonic Chern insulators with superior properties. As a novel mechanism, the simultaneous occurrence of the hyperbolic and gyromagnetic effects in these metamaterials is shown to open the large topological band gaps with gap Chern number of one. Importantly, unlike many other photonic Chern insulators, the GHM Chern insulators possess non-radiative chiral edge modes on their surfaces, and thus allow to fabricate unidirectional waveguides without cladding metals which generally incurr considerable Ohmic loss. Furthermore, the photonic edge states in the proposed Chern insulators are robust against disorder on a wide range of length scales, in strong contrast to crystalline topological insulators, and the light flow direction on the surface of the Chern insulators can be easily flipped by switching the direction of an applied magnetic field. Fascinatingly, we find that negative refraction of the topological surface wave occurs at the boundary between the GHMs with the opposite signs of gyromagnetic parameters. Finally, we show that compared with other photonic topological materials such as chiral hyperbolic materials, the present GHM Chern insulators can be much easier to fabricate.
Within a relativistic quantum formalism we examine the role of second-order corrections caused by the application of magnetic fields in two-dimensional topological and Chern insulators. This allows to reach analytical expressions for the change of the Berry curvature, orbital magnetic moment, density of states and energy determining their canonical grand potential and transport properties. The present corrections, which become relevant at relatively low fields due to the small gap characterizing these systems, unveil a zero-field diamagnetic susceptibility which can be tuned by the external magnetic field.
Robustness against disorder and defects is a pivotal advantage of topological systems, manifested by absence of electronic backscattering in the quantum Hall and spin-Hall effects, and unidirectional waveguiding in their classical analogs. Two-dimensional (2D) topological insulators, in particular, provide unprecedented opportunities in a variety of fields due to their compact planar geometries compatible with the fabrication technologies used in modern electronics and photonics. Among all 2D topological phases, Chern insulators are to date the most reliable designs due to the genuine backscattering immunity of their non-reciprocal edge modes, brought via time-reversal symmetry breaking. Yet, such resistance to fabrication tolerances is limited to fluctuations of the same order of magnitude as their band gap, limiting their resilience to small perturbations only. Here, we tackle this vexing problem by introducing the concept of anomalous non-reciprocal topological networks, that survive disorder levels with strengths arbitrarily larger than their bandgap. We explore the general conditions to obtain such unusual effect in systems made of unitary three-port scattering matrices connected by phase links, and establish the superior robustness of the anomalous edge modes over the Chern ones to phase link disorder of arbitrarily large values. We confirm experimentally the exceptional resilience of the anomalous phase, and demonstrate its operation by building an ideal anomalous topological circulator despite its arbitrary shape and large number of ports. Our results pave the way to efficient, arbitrary planar energy transport on 2D substrates for wave devices with full protection against large fabrication flaws or imperfections.
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate voltage fluctuation and disorder strength. Furthermore, seven basic logic gates distinct from the conventional structures are proposed. Our proposal has potential applications in low power integrated circuits and enlightens the building of integrated circuits in topological materials.
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