Do you want to publish a course? Click here

Chiral Interface States and Related Quantized Transport in Disordered Chern Insulators

169   0   0.0 ( 0 )
 Added by Hua Jiang
 Publication date 2020
  fields Physics
and research's language is English




Ask ChatGPT about the research

In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Experimentally, such chiral interface states can be realized by imposing transverse electric field, in which the energy window for quantized transport is much broader than the intrinsic band gap of the corresponding CI. These phenomena are quite universal for disordered CIs due to the direct phase transition between the CI and the normal insulator.



rate research

Read More

We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate voltage fluctuation and disorder strength. Furthermore, seven basic logic gates distinct from the conventional structures are proposed. Our proposal has potential applications in low power integrated circuits and enlightens the building of integrated circuits in topological materials.
Even though no local order parameter in the sense of the Landau theory exists for topological quantum phase transitions in Chern insulators, the highly non-local Berry curvature exhibits critical behavior near a quantum critical point. We investigate the critical properties of its real space analog, the local Chern marker, in weakly disordered Chern insulators. Due to disorder, inhomogeneities appear in the spatial distribution of the local Chern marker. Their size exhibits power-law scaling with the critical exponent matching the one extracted from the Berry curvature of a clean system. We drive the system slowly through such a quantum phase transition. The characteristic size of inhomogeneities in the non-equilibrium post-quench state obeys the Kibble-Zurek scaling. In this setting, the local Chern marker thus does behave in a similar way as a local order parameter for a symmetry breaking second order phase transition. The Kibble-Zurek scaling also holds for the inhomogeneities in the spatial distribution of excitations and of the orbital polarization.
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring sufficiently large ensemble sizes using variable resonator detunings.
We study charge transport in one-dimensional graphene superlattices created by applying layered periodic and disordered potentials. It is shown that the transport and spectral properties of such structures are strongly anisotropic. In the direction perpendicular to the layers, the eigenstates in a disordered sample are delocalized for all energies and provide a minimal non-zero conductivity, which cannot be destroyed by disorder, no matter how strong this is. However, along with extended states, there exist discrete sets of angles and energies with exponentially localized eigenfunctions (disorder-induced resonances). It is shown that, depending on the type of the unperturbed system, the disorder could either suppress or enhance the transmission. Most remarkable properties of the transmission have been found in graphene systems built of alternating p-n and n-p junctions. This transmission has anomalously narrow angular spectrum and, surprisingly, in some range of directions it is practically independent of the amplitude of fluctuations of the potential. Owing to these features, such samples could be used as building blocks in tunable electronic circuits. To better understand the physical implications of the results presented here, most of our results have been contrasted with those for analogous wave systems. Along with similarities, a number of quite surprising differences have been found.
We investigate the conductivity $sigma$ of graphene nanoribbons with zigzag edges as a function of Fermi energy $E_F$ in the presence of the impurities with different potential range. The dependence of $sigma(E_F)$ displays four different types of behavior, classified to different regimes of length scales decided by the impurity potential range and its density. Particularly, low density of long range impurities results in an extremely low conductance compared to the ballistic value, a linear dependence of $sigma(E_F)$ and a wide dip near the Dirac point, due to the special properties of long range potential and edge states. These behaviors agree well with the results from a recent experiment by Miao emph{et al.} (to appear in Science).
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا