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Register a new userSimultaneous ultraviolet, visible and near-infrared continuous-wave lasing in a rare-earth-doped microcavity
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Microlaser with multiple lasing bands is critical in various applications, such as full-colour display, optical communications and computing. Here, we propose a simple and efficient method for homogeneously doping rare earth elements into a silica whispering-gallery-mode microcavity. By this method, we demonstrate simultaneous and stable lasing covering ultraviolet, visible and near-infrared bands in an ultrahigh-Q (exceeding 108) Er-Yb co-doped silica microsphere under room temperature and continuous-wave pump for the first time. The lasing thresholds of the 380, 410, 450, 560, 660, 800, 1080 and 1550 nm-bands are estimated to be 380, 150, 2.5, 12, 0.17, 1.7, 10 and 38 {mu}W, respectively, where the lasing in the 380, 410 and 450 nm-bands by Er element have not been separately demonstrated under room temperature and continuous-wave pump until this work. This ultrahigh-Q doped microcavity is an excellent platform for high-performance multi-band microlasers, ultrahigh-precise sensors, optical memories and cavity-enhanced light-matter interaction studies.
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We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^mathrm{TO}$ and E$_2^mathrm{high}$ phonons with Raman shifts of $sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.
Numerous bulk crystalline materials exhibit attractive nonlinear and luminescent properties for classical and quantum optical applications. A chip-scale platform for high quality factor optical nanocavities in these materials will enable new optoelectronic devices and quantum light-matter interfaces. In this article, photonic crystal nanobeam resonators fabricated using focused ion beam milling in bulk insulators, such as rare-earth doped yttrium orthosilicate and yttrium vanadate, are demonstrated. Operation in the visible, near infrared, and telecom wavelengths with quality factors up to 27,000 and optical mode volumes close to one cubic wavelength is measured. These devices enable new nanolasers, on-chip quantum optical memories, single photon sources, and non-linear devices at low photon numbers based on rare-earth ions. The techniques are also applicable to other luminescent centers and crystals.
Experimental and theoretical studies of spectral properties of crystalline TlCl:Bi are performed. Two broad near-infrared luminescence bands with a lifetime about 0.25 ms are observed: a strong band near 1.18 mkm excited by 0.40, 0.45, 0.70 and 0.80 mkm radiation, and a weak band at > 1.5 mkm excited by 0.40 and 0.45 mkm radiation. Computer modeling of Bi-related centers in TlCl lattice suggests that Bi^+__V^-(Cl) center (Bi^+ in Tl site and a negatively charged Cl vacancy in the nearest anion site) is most likely responsible for the IR luminescence.
The development of metamaterials, data processing circuits and sensors for the visible and UV parts of the spectrum is hampered by the lack of low-loss media supporting plasmonic excitations and drives the intense search for plasmonic materials beyond noble metals. By studying plasmonic nanostructures fabricated on the surface of topological insulator $mbox{Bi}_{1.5}mbox{Sb}_{0.5}mbox{Te}_{1.8}mbox{Se}_{1.2}$ we found that it is orders of magnitude better plasmonic material than gold and silver in the blue-UV range. Metamaterial fabricated from $mbox{Bi}_{1.5}mbox{Sb}_{0.5}mbox{Te}_{1.8}mbox{Se}_{1.2}$ show plasmonic resonances from 350 nm to 550 nm while surface gratings exhibit cathodoluminescent peaks from 230 nm to 1050 nm. The negative permittivity underpinning plasmonic response is attributed to the combination of bulk interband transitions and surface contribution of the topologically protected states. The importance of our result is in the identification of new mechanisms of negative permittivity in semiconductors where visible-range plasmonics can be directly integrated with electronics.
Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-oninsulator platform (4H-SiCOI). By carrying out microphotoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to $5.25 times 10^3$ and mode volumes down to $2.69 times(lambda /n)^3$ at the visible and near-infrared wavelengths. Moreover, the demonstrated wavelength-sized microdisk resonators exhibit WGMs whose resonant wavelengths compatible with the zero-phonon lines of spin defects in 4H-SiCOI, making them a promising candidate for applications in cavity quantum electrodynamics and integrated quantum photonic circuits.
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