Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userContinuous-wave Raman Lasing in Aluminum Nitride Microresonators
89
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^mathrm{TO}$ and E$_2^mathrm{high}$ phonons with Raman shifts of $sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.
rate research
Read More
Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a singular Raman effect among amorphous materials. Yet, the Raman lasing performance in high quality and chip integrated ChG microresonators remains unexplored. Here, we demonstrate an engineered Raman lasing dynamic based on home developed photonic integrated high-Q ChG microresonators. With a quality factor above 10^6, we achieve the record-low lasing threshold 3.25 mW among integrated planar photonic platforms. Both the single-mode Raman lasers and a broadband Raman-Kerr comb are observed and characterized, which is dependent on the dispersion of our flexible photonic platform and engineered via tuning the waveguide geometric size. The tunability of such a chipscale Raman laser is also demonstrated through tuning the pump wavelength and tuning the operating temperature on the chip. This allows for the access of single-mode lasing at arbitrary wavelengths in the range 1615-1755 nm. Our results may contribute to the understanding of rich Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to chip-scale efficient Raman lasers that is highly desired in spectroscopic applications in the infrared.
Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.
High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this Letter, we demonstrate an optimized fabrication of dually-resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17,000%/W is obtained in the low power regime and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.
Propagation of light in a highly scattering medium is among the most fascinating optical effect that everyone experiences on an everyday basis and possesses a number of fundamental problems which have yet to be solved. Conventional wisdom suggests that non-linear effects do not play a significant role because the diffusive nature of scattering acts to spread the intensity, dramatically weakening these effects. We demonstrate the first experimental evidence of lasing on a Raman transition in a bulk three-dimensional random media. From a practical standpoint, Raman transitions allow for spectroscopic analysis of the chemical makeup of the sample. A random Raman laser could serve as a bright Raman source allowing for remote, chemically specific, identification of powders and aerosols. Fundamentally, the first demonstration of this new light source opens up an entire new field of study into non-linear light propagation in turbid media, with the most notable application related to non-invasive biomedical imaging.
We investigate soliton generation dynamics with the influence of thermal effects. Either soliton annihilation or survival can occur in different trials with the same tuning method, and a spontaneous route to soliton formation is observed.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
